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參數(shù)資料
| 型號： | JDV2S27FS |
| 元件分類： | 變?nèi)荻O管 |
| 英文描述： | UHF BAND, 8.31 pF, SILICON, VARIABLE CAPACITANCE DIODE |
| 封裝： | LEAD FREE, FSC, 1-1L1A, 2 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 222K |
| 代理商： | JDV2S27FS |
JDV2S27FS
2005-11-07
1
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S27FS
VCO for UHF Band Radio
High capacitance ratio: C1V/C4V =2.9 (typ.)
Low series resistance: rs = 0.49 (typ.)
This device is suitable for use in small tuners.
Lead (Pb)-free.
Maximum Ratings (Ta
= 25°C)
Characteristic
Symbol
Rating
Unit
Reverse voltage
VR
10
V
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55~150
°C
Electrical Characteristics (Ta
= 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Reverse voltage
VR
IR = 1 A
10
V
Reverse current
IR
VR = 5 V
1
nA
C1V
VR = 1 V, f = 1 MHz
8.06
8.56
Capacitance
C4V
VR = 4 V, f = 1 MHz
2.79
2.98
pF
Capacitance ratio
C1V/C4V
2.79
2.98
Series resistance
rs
VR = 1 V, f = 470 MHz
0.49
0.64
Note: Signal level when capacitance is measured. Vsig = 100mVrms
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0.
8±
0
.05
0.2
1.
0
±
0
.05
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
fSC
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