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參數(shù)資料
| 型號(hào)： | JDH2S02FS |
| 元件分類： | 射頻混頻器 |
| 英文描述： | SILICON, UHF BAND, MIXER DIODE |
| 封裝： | 1-1L1A, 2 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 128K |
| 代理商： | JDH2S02FS |
JDH2S02FS
2007-11-01
1
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
JDH2S02FS
UHF Band Mixer
Suitable for reducing set size through the use of a two-pin small
package supporting high-density mounting
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Maximum (peak) reverse voltage
VR
10
V
Forward current
IF
10
mA
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55~125
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristic
Symbol
Test Condition
Min
Typ.
Max
Unit
Forward voltage
VF
IF = 1 mA
0.24
V
Forward current
IF
VF = 0.5 V
2
mA
Reverse current
IR
VR = 0.5 V
25
μA
Capacitance
CT
VR = 0.2 V, f = 1 MHz
0.3
pF
Note: Signal level when capacitance is measured: Vsig
= 20 mVrms
Marking
Caution
This device is sensitive to electrostatic discharge. Operators should wear antistatic clothing, and containers and
other objects that come into direct contact with the product should be made of antistatic materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
1-1L1A
Weight: 0.0006 g (typ.)
0
.8±
0.
05
0.2
1.
0
±
0.
0
5
0.1±0.05
0.6±0.05
0.
1
0.
1
A
0.48+0.02
-0.03
±0.05
A
M
0.07
T
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