參數(shù)資料
型號： IXTH11P50
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated
中文描述： 11 A, 500 V, 0.75 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 2/4頁
文件大小： 98K
代理商： IXTH11P50
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
5,049,961 5,187,117 5,486,715
4,850,072
4,931,844
5,034,796
5,063,307 5,237,481 5,381,025
IXTH 11N80
IXTM 11N80 IXTM 13N80
IXTH 13N80
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
8
14
S
C
iss
C
oss
C
rss
4500
310
65
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
20
33
63
32
50
50
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 2
,
(External)
100
50
Q
g(on)
Q
gs
Q
gd
145
30
55
170
45
80
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.42
K/W
K/W
0.25
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
11N80
13N80
11
13
A
A
I
SM
Repetitive;
pulse width limited by T
JM
11N80
13N80
44
52
A
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
800
ns
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD (IXTH) Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
Dim.
Millimeter
Min.
6.4
Inches
Min.
.250
Max.
11.4
3.42
1.09
22.22
11.17
5.71
Max.
.450
.135
.043
.875
.440
.225
A
A1
b
D
e
e1
.97
.038
10.67
5.21
.420
.205
L
p
p1
q
R
R1
s
7.93
3.84
3.84
30.15 BSC
.312
.151
.151
1.187 BSC
4.19
4.19
.165
.165
13.33
4.77
17.14
.525
.188
.675
16.64
.655
TO-204AA (IXTM) Outline
Pins
1 - Gate
Case - Drain
2 - Source
1 2 3
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IXTH120N15T 功能描述:MOSFET 120 Amps 150V 14 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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IXTH12N100L 功能描述:MOSFET 12 Amps 1000V 1.3 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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