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參數(shù)資料
| 型號： | IXTH12N120 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET, Avalanche Rated High Voltage |
| 中文描述： | 12 A, 1200 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 553K |
| 代理商： | IXTH12N120 |
2004 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
P
D
T
J
T
JM
T
stg
M
d
Weight
T
J
T
J
Continuous
Transient
= 25
°
C to 150
°
C
= 25
°
C to 150
°
C; R
GS
= 1 M
1200
V
1200
V
±
30
±
40
V
V
T
C
T
C
= 25
°
C
= 25
°
C, pulse width limited by T
JM
12
48
A
A
12
A
T
C
T
C
T
C
= 25
°
C
= 25
°
C
30
1.0
mJ
J
= 25
°
C
500
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
Mounting torque
1.13/10 Nm/lb.in.
6
g
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
300
°
C
TO-247 AD
Power MOSFET, Avalanche Rated
High Voltage
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 250
μ
A
1200
V
V
3
5
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
3
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.4
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
z
International standard package
JEDEC TO-247 AD
z
Low R
DS (on)
HDMOS
TM
process
z
Rugged polysilicon gate cell structure
z
Fast switching times
Applications
z
Switch-mode and resonant-mode
power supplies
z
Motor controls
z
Uninterruptible Power Supplies (UPS)
z
DC choppers
Advantages
z
Easy to mount with 1 screw
(isolated mounting screw hole)
z
Space savings
z
High power density
D (TAB)
DS98937E(04/04)
IXTH 12N120
V
DSS
I
D (cont)
=
12
A
R
DS(on)
=
1.4
=
1200 V
Preliminary Data Sheet
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXTH12N140 | 功能描述:MOSFET 1200V High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH12N150 | 功能描述:MOSFET >1200V High Voltage Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXTH12N45 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:12 AMPS, 450-500V, 0.4OM/0.5OM |
| IXTH12N45A | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247 |
| IXTH12N45MA | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 450V V(BR)DSS | 12A I(D) | TO-247(5) |
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