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參數(shù)資料
| 型號(hào)： | IXGK120N60B |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFAST IGBT |
| 中文描述： | 200 A, 600 V, N-CHANNEL IGBT, TO-264AA |
| 封裝： | TO-264AA, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 46K |
| 代理商： | IXGK120N60B |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
CES
V
CGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
600
600
V
V
V
CES
V
GEM
Continuous
Transient
20
30
V
V
I
C25
I
C90
I
L(RMS)
I
CM
T
C
= 25 C
T
= 90 C
External lead limit
T
C
= 25 C, 1 ms
200
120
76
300
A
A
A
A
SSOA
(RBSOA)
V
= 15 V, T
= 125 C, R
G
= 2.4
Clamped inductive load
I
= 200
@ 0.8 V
CES
A
P
C
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25 C
560
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
600
typ.
max.
BV
CES
I
C
= 1 mA, V
GE
= 0 V
V
V
GE(th)
I
C
= 1 mA, V
CE
= V
GE
2.5
5.5
V
I
CES
V
CE
= V
V
GE
= 0 V
T
J
= 25 C
T
J
= 125 C
200
2 mA
A
I
GES
V
CE
= 0 V, V
GE
= 20 V
400 nA
V
CE(sat)
I
C
= I
C90
, V
GE
= 15 V
2.1
V
Features
International standard packages
Very high current, fast switching IGBT
Low V
- for minimum on-state conduction
losses
MOS Gate turn-on
- drive simplicity
Applications
AC motor speed control
DC servo and robot drives
DC choppers
Uninterruptible power supplies (UPS)
Switch-mode and resonant-mode
power supplies
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFAST
TM
IGBT
98602 (3/99)
PLUS 247
TM
(IXGX)
G
C
(TAB)
G = Gate
C = Collector
E = Emitter
TAB = Collector
IXGK 120N60B
IXGX 120N60B
V
CES
I
C25
V
CE(sat)
= 2.1 V
= 600 V
= 200 A
G
C
(TAB)
TO-264 AA
(IXGK)
Advanced Technical Information
E
IXYS reserves the right to change limits, test conditions, and dimensions.
E
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGK120N60B_10 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFAST IGBTs |
| IXGK120N60B3 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:GenX3 600V IGBTs |
| IXGK120N60C2 | 功能描述:IGBT 晶體管 120 Amps 600V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK28N140B3H1 | 功能描述:IGBT 晶體管 28 Amps 1400V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGK300N60B3 | 功能描述:IGBT 模塊 300 Amps 600V 1.6 Rds RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
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