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參數(shù)資料
| 型號： | IXGH10N60A |
| 廠商： | IXYS CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | Low VCE(sat) IGBT, High speed IGBT |
| 中文描述： | 20 A, 600 V, N-CHANNEL IGBT, TO-247AD |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 46K |
| 代理商： | IXGH10N60A |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
IXGH 10N100
IXGH 10N100A
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t
≤
300
μ
s, duty cycle
≤
2 %
= I
; V
CE
= 10 V,
4
8
S
C
ies
C
oes
C
res
750
150
30
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
Q
g
Q
ge
Q
gc
52
13
24
70
25
45
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
100
200
550
800
500
ns
ns
ns
ns
ns
mJ
900
10N100
10N100A
10N100A
E
off
2
3
t
d(on)
t
ri
E
on
t
d(off)
t
fi
100
200
1.1
600
1250
950
5.0
2.5
ns
ns
mJ
ns
ns
ns
mJ
mJ
1000
2000
1000
10N100
10N100A
10N100
10N100A
E
off
R
thJC
R
thCK
1.2 K/W
K/W
0.25
IXGH 10N100 and IXGH 10N100A characteristic curves are located on the
IXGH 10N100U1 and IXGH 10N100AU1 data sheets.
TO-247 AD Outline
Inductive load, T
J
= 25
°
C
I
C
= I
, V
GE
= 15 V, L = 300
μ
H,
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
Inductive load, T
J
= 125
°
C
I
C
= I
C90
, V
GE
= 15 V, L = 300
μ
H
V
CE
= 0.8 V
CES
, R
G
= R
off
= 150
Remarks: Switching times
may increase
for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
1 = Gate
2 = Collector
3 = Emitter
Tab = Collector
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXGH10N60U1 | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs |
| IXGH10N60AU1 | Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs |
| IXGH12N100 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| IXGH12N100U1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
| IXGH12N100AU1 | Low VCE(sat) IGBT with Diode High Speed IGBT with Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXGH10N60AU1 | 功能描述:IGBT 晶體管 G-series A,B,C RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH10N60U1 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:Low VCE(sat) IGBT with Diode, High speed IGBT with Diode Combi Packs |
| IXGH120N30B3 | 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH120N30C3 | 功能描述:IGBT 晶體管 120 Amps 300V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| IXGH12N100 | 功能描述:IGBT 晶體管 24Amps 1000V RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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