參數(shù)資料
型號： IXFX24N100F
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerRF Power MOSFETs
中文描述： 24 A, 1000 V, 0.0039 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, PLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 99K
代理商： IXFX24N100F
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
1000
1000
V
V
V
GS
V
GSM
Continuous
Transient
±
20
±
30
V
V
I
D25
I
DM
I
AR
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
24
96
24
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
60
3.0
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
10
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
T
C
= 25
°
C
560
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
°
C
Mounting torque
TO-264
0.4/6 Nm/lb.in.
PLUS 247
TO-264
6
10
g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
1000
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 1mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
=
±
20 V, V
DS
= 0
3.0
5.5 V
±
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
100
μ
A
3 mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 1
0.39
98874 (1/02)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
Advance Technical Information
HiPerRF
TM
Power MOSFETs
F-Class: MegaHertz Switching
N-Channel Enhancement Mode
Avalanche Rated,
Low Q
g
,
Low Intrinsic R
g
High dV/dt,
Low t
rr
Features
RF capable MOSFETs
Double metal process for low gate
resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Switched-mode and resonant-mode
power supplies, >500kHz switching
DC choppers
Pulse generation
Laser drivers
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
IXFX 24N100F V
DSS
IXFK 24N100F I
D25
= 1000 V
= 24 A
R
DS(on)
= 0.39
t
rr
≤
250 ns
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參數(shù)描述
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