參數(shù)資料
型號： IXFX150N15
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 150 A, 150 V, 0.0125 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLUS247, 3 PIN
文件頁數(shù)： 1/2頁
文件大小： 47K
代理商： IXFX150N15
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
150
150
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
D(RMS)
I
DM
I
AR
T
= 25 C (MOSFET chip capability)
External lead (current limit)
T
C
= 25 C, Note 1
T
C
= 25 C
150
76
600
150
A
A
A
A
E
AR
E
AS
T
C
= 25 C
T
C
= 25 C
60
3
mJ
J
dv/dt
I
S
T
J
T
C
= 25 C
I
, di/dt 100 A/ s, V
DD
V
DSS
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
560
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.9/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
150
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
2.0
4.0 V
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
12.5 m
R
DS(on)
Single MOSFET Die
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98654 (9/99)
PLUS 247
TM
(IXFX)
G
D
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFK 150N15
IXFX 150N15
V
DSS
I
D25
R
DS(on)
= 12.5 m
= 150 V
= 150 A
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
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參數(shù)描述
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