參數(shù)資料
型號： IXFK180N07
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓70V,導通電阻6mΩ的N溝道增強型HiPerFET功率MOSFET)
中文描述： 180 A, 70 V, 0.006 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： TO-264AA, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 48K
代理商： IXFK180N07
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
70
70
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
D(RMS)
I
DM
I
AR
T
= 25 C (MOSFET chip capability)
External lead (current limit)
T
C
= 25 C, Note 1
T
C
= 25 C
180
76
720
180
A
A
A
A
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
60
3
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
560
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.9/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
70
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
I
DSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
2.0
4.0 V
100 nA
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
R
DS(on)
6 m
Single MOSFET Die
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
HiPerFET
TM
Power MOSFETs
98556B (6/99)
PLUS 247
TM
G
D
D (TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
IXFK 180N07
IXFX 180N07
V
DSS
I
D25
R
DS(on)
=
= 70 V
= 180 A
6 m
t
rr
250 ns
S
G
D
(TAB)
TO-264 AA (IXFK)
Advanced Technical Information
IXYS reserves the right to change limits, test conditions, and dimensions.
相關PDF資料
PDF描述
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相關代理商/技術參數(shù)
參數(shù)描述
IXFK180N085 功能描述:MOSFET 180 Amps 85V 0.007 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK180N10 功能描述:MOSFET 100V 180A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK180N10_09 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiperFET Power MOSFETs
IXFK180N15P 功能描述:MOSFET 180 Amps 150V 0.011 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK180N25T 功能描述:MOSFET 180A 250V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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