參數資料
型號： IXFN170N10
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFET
中文描述： 170 A, 100 V, 0.01 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁數： 1/4頁
文件大小： 145K
代理商： IXFN170N10
1 - 4
2000 IXYS All rights reserved
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
TO-264 AA (IXFK)
Features
International standard packages
Encapsulating
epoxy
meets
UL
94
V-0, flammability classification
miniBLOC
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
G = Gate
S = Source
D = Drain
TAB = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
S
G
D
D (TAB)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
DSS
temperature coefficient
Test Conditions
Characteristic Values
Typ. Max.
Min.
100
V
0.077
%/K
V
GS(th)
V
DS
= V
GS
, I
D
= 8mA
V
GS(th)
temperature coefficient
2
4
V
-0.183
%/K
I
GSS
I
DSS
V
GS
= 20V, V
GS
= 0V
V
DS
= 0.8 V
DSS
V
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
D25
Pulse test, t 300 ms,
duty cycle d 2 %
200
nA
T
J
= 25 C
T
J
= 125 C
400
2
A
mA
R
DS(on)
10
m
97505D (7/00)
HiPerFET
TM
Power MOSFET
Single MOSFET Die
Symbol
Test Conditions
Maximum Ratings
IXFK
170N10
170N10
IXFN
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
D125
I
DM
I
AR
E
AR
dv/dt
T
J
= 25°C to 150°C
T
J
= 25°C to 150°C
Continuous
Transient
100
100
100
100
V
V
20
30
20
30
V
V
T
C
= 25 C
T
C
= 125 C
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
170
76
680
170
170
NA
680
170
A
A
A
60
60
mJ
5
5 V/ns
P
D
560
600 W
T
J
T
JM
T
stg
-55 ... +150 C
150
-55 ... +150 C
C
T
L
V
ISOL
1.6 mm (0.063 in) from case for 10 s
300
N/A
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
N/A
N/A
2500
3000
V~
V~
M
d
0.9/6
N/A
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
10
30
g
V
DSS
100V
100V
I
D25
170A
170A
R
DS(on)
t
rr
10m
10m
IXFN170N10
IXFK170N10
200ns
200ns
IXYS reserves the right to change limits, test conditions, and dimensions.
Preliminary data
相關PDF資料
PDF描述
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IXFK180N085 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓85V,導通電阻7mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFK180N10 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓100V,導通電阻8mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFK21N100F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFX21N100F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
相關代理商/技術參數
參數描述
IXFN170N10 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B
IXFN170N30P 功能描述:MOSFET 138 Amps 300V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN17N80 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET Power MOSFTETs
IXFN180N06 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFN180N07 功能描述:MOSFET 180 Amps 70V 0.007 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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