參數(shù)資料
型號(hào): IXFT66N20Q
廠商: IXYS CORP
元件分類: JFETs
英文描述: HiPerFET Power MOSFETs Q-Class
中文描述: 66 A, 200 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝: PLASTIC, TO-268, 3 PIN
文件頁數(shù): 1/4頁
文件大?。?/td> 157K
代理商: IXFT66N20Q
2003 IXYS All rights reserved
V
DSS
I
D25
R
DS(on)
=
= 200
=
V
A
66
40
m
t
rr
200 ns
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
Test Conditions
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
Maximum Ratings
200
200
V
V
±
30
±
40
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
66
A
A
A
264
66
40
1.5
mJ
J
dv/dt
I
S
T
J
150
°
C, R
G
= 2
T
C
= 25
°
C
I
DM
, di/dt
100 A/
μ
s, V
DD
V
DSS
,
20
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
400
W
°
C
°
C
°
C
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
TO-247 AD
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
DS99039(04/03)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
=
±
30 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
300
μ
s, duty cycle d
2 %
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
40
m
Preliminary data sheet
TO-268 (D3)
(IXFT)
Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
g
Features
z
IXYS advanced low Q
process
z
International standard packages
z
Low gate charge and capacitance
- easier to drive
- faster switching
z
Low R
z
Unclamped Inductive Switching (UIS)
rated
z
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
z
Easy to mount
z
Space savings
z
High power density
IXFH 66N20Q
IXFT 66N20Q
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