參數(shù)資料
型號： IXFH67N10
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 67 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 1/4頁
文件大小： 94K
代理商： IXFH67N10
1 - 4
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
100
100
V
V
20
30
V
V
T
C
= 25 C
67N10
75N10
67N10
75N10
67N10
75N10
67
75
268
300
67
75
A
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
dv/dt
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
,
T
J
150 C, R
G
= 2
T
C
= 25 C
30
mJ
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10
Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
TO-247 AD (IXFH)
HiPerFET
TM
Power MOSFETs
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250 A
V
DS
= V
GS
, I
D
= 4 mA
100
2.0
V
V
4
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25 C
T
J
= 125 C
250
A
1
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
67N10
75N10
0.025
0.020
Pulse test, t 300 s, duty cycle d 2 %
TO-204 AE (IXFM)
V
DSS
100 V
100 V
t
rr
200 ns
I
D25
67 A
75 A
R
DS(on)
25 m
20 m
IXFH/IXFM 67 N10
IXFH/IXFM 75 N10
G = Gate,
S = Source,
D = Drain,
TAB = Drain
Features
G
International standard packages
G
Low R
HDMOS
TM
process
G
Rugged polysilicon gate cell structure
G
Unclamped Inductive Switching (UIS)
rated
G
Low package inductance
- easy to drive and to protect
G
Fast intrinsic Rectifier
Applications
G
DC-DC converters
G
Synchronous rectification
G
Battery chargers
G
Switched-mode and resonant-mode
power supplies
G
DC choppers
G
AC motor control
G
Temperature and lighting controls
G
Low voltage relays
Advantages
G
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
G
Space savings
G
High power density
D
G
91521F (10/95)
(TAB)
IXYS reserves the right to change limits, test conditions, and dimensions.
相關(guān)PDF資料
PDF描述
IXFH75N10 HiPerFET Power MOSFETs
IXFM67N10 HiPerFET Power MOSFETs
IXFM75N10 HiPerFET Power MOSFETs
IXFH68N20 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓200V,導通電阻35mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFH6N100F Power MOSFETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH68N20 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HIPERFET POWER MOSFETs
IXFH69N30P 功能描述:MOSFET 69 Amps 300V 0.049 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH6N100 功能描述:MOSFET 1KV 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH6N100 制造商:IXYS Corporation 功能描述:MOSFET N TO-247
IXFH6N100F 功能描述:MOSFET HiPerRF Power Mosfet 1000V 6A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購，3分鐘左右您將得到回復。

采購需求

(若只采購一條型號，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

發(fā)布成功！您可以繼續(xù)發(fā)布采購。也可以進入我的后臺，查看報價

*型號 *數(shù)量 廠商 批號 封裝
添加更多采購

我的聯(lián)系方式

*
*
*