- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄361010 > IXFT58N20Q TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-268 PDF資料下載
參數(shù)資料
| 型號： | IXFT58N20Q |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-268 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 58A條（?。﹟至268 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大?。?/td> | 322K |
| 代理商： | IXFT58N20Q |
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
Min.
Typ.
Max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
24
34
S
C
iss
C
oss
C
rss
3600
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
870
pF
280
pF
t
d(on)
t
r
t
d(off)
t
f
20
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1.5
(External)
40
ns
40
ns
13
ns
Q
g(on)
Q
gs
Q
gd
98
140
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
25
35
nC
45
70
nC
R
thJC
R
thCK
0.42
K/W
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
58
A
I
SM
Repetitive;
232
A
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
200
ns
μ
C
I
F
= I
S
-di/dt = 100 A/
μ
s, V
R
= 100 V
0.7
7
A
Dim.
Millimeter
Min.
4.7
2.2
2.2
1.0
1.65
2.87
.4
20.80
15.75
5.20
19.81
Inches
Min.
.185
.087
.059
.040
.065
.113
.016
.819
.610
0.205 0.225
.780
Max.
5.3
2.54
2.6
1.4
2.13
3.12
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
A
A
1
A
2
b
b
1
b
2
C
D
E
e
L
L1
P
Q
R
S
.8
21.46
16.26
5.72
20.32
4.50
3.65
6.40
5.49
.800
.177
.144
3.55
5.89
4.32
6.15 BSC
.140
0.232 0.252
.170
242 BSC
.216
TO-247 AD Outline
Terminals: 1 - Gate
2 - Drain
Tab - Drain
3 - Source
1 2 3
IXFH
IXFT
58N20Q
58N20Q
TO-268 Outline
Min. Recommended Footprint
Dimensions in mm and inches
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IXFH58N20Q | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-247AD |
| IXFH5N100 | HIPERFET Power MOSFTETs |
| IXFT70N15 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 70A I(D) | TO-268 |
| IXFH70N15 | TRANSISTOR | MOSFET | N-CHANNEL | 150V V(BR)DSS | 70A I(D) | TO-247AD |
| IXFT80N10 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-268 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IXFT60N20 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs |
| IXFT60N20F | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT60N25Q | 功能描述:MOSFET 60 Amps 250V 0.047 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT60N50P3 | 功能描述:MOSFET 500V 60A 0.1Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFT66N20Q | 功能描述:MOSFET 66 Amps 200V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。