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參數(shù)資料
| 型號： | IXFT80N10 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-268 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 100V的五（巴西）直| 80A條（丁）|至268 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 90K |
| 代理商： | IXFT80N10 |
2000 IXYS All rights reserved
98739 (8/00)
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
L(RMS)
I
DM
I
AR
E
AR
E
AS
dv/dt
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
T
C
= 25
°
C
Lead current limit
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
100
100
±
20
±
30
80
75
320
80
50
2.5
5
V
V
V
V
A
A
A
A
mJ
J
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
V/ns
P
D
T
J
T
JM
T
stg
300
W
-55 to +150
150
-55 to +150
°
C
°
C
°
C
T
L
1.6 mm (0.063 in) from case for 10 s 300
°
C
M
d
Mounting torque
1.13/10 Nm/lb.in.
Weight
TO-247 6
TO-268 4
g
g
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt
Preliminary data sheet
Features
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS)
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 1 mA
V
DS
= V
GS
, I
D
= 4 mA
100
2.0
V
V
4.0
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
50
1
μ
A
mA
R
DS(on)
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
12.5
m
TO-247 AD (IXFH)
G = Gate D = Drain
S = Source TAB = Drain
HiPerFET
TM
Power MOSFETs
TO-268 ( IXFT) Case Style
(TAB)
G
S
V
DSS
I
D25
R
DS(on)
= 12.5 m
t
rr
≤
200 ns
= 100 V
= 80 A
IXFH 80N10
IXFT 80N10
(TAB)
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| IXFH80N10 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-247AD |
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