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參數資料
| 型號： | IXFT58N20Q |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 58A I(D) | TO-268 |
| 中文描述： | 晶體管| MOSFET的| N溝道| 200伏五（巴西）直| 58A條（?。﹟至268 |
| 文件頁數： | 1/2頁 |
| 文件大?。?/td> | 322K |
| 代理商： | IXFT58N20Q |
1999 IXYS All rights reserved
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
Test Conditions
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Maximum Ratings
200
200
V
V
Continuous
Transient
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
T
C
= 25
°
C
T
C
= 25
°
C
58
A
232
A
58
A
30
mJ
1.0
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
°
C
°
C
°
C
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
TO-247 AD
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
98523A (5/99)
Symbol
(T
J
= 25
°
C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 250
μ
A
Test Conditions
Characteristic Values
Min. Typ.
Max.
200
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.0
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
40
m
Preliminary data sheet
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated High dv/dt, Low Q
g
Features
l
IXYS advanced low Q
process
l
International standard packages
l
Low gate charge and capacitance
- easier to drive
- faster switching
l
Low R
l
Unclamped Inductive Switching (UIS)
rated
l
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
l
Easy to mount
l
Space savings
l
High power density
IXFH 58N20Q
IXFT 58N20Q
V
DSS
I
D25
R
DS(on)
=
= 200
=
V
A
58
40 m
W
t
rr
￡
200 ns
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| IXFT80N10 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-268 |
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