參數(shù)資料
型號(hào)： IXFT26N50Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： HiPerFET Power MOSFETs
中文描述： 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： PLASTIC, TO-268, 3 PIN
文件頁數(shù)： 1/4頁
文件大?。?/td> 134K
代理商： IXFT26N50Q
2001 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
500
V
500
V
Continuous
±
20
±
30
V
Transient
V
T
C
= 25
°
C
24N50
26N50
24N50
26N50
24N50
26N50
24
26
96
104
24
26
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, Note 1
I
AR
T
C
= 25
°
C
E
AR
E
AS
dv/dt
T
C
= 25
°
C
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
30
mJ
1.5
J
I
S
5 V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.063 in) from case for 10 s
300
°
C
Mounting torque 1.13/10
Nm/lb.in.
TO-247
TO-268
6
4
g
g
N-Channel Enhancement Mode
Avalanche Rated, Low Q
g
,
High dv/dt
Features
IXYS advanced low Q
g
process
International standard packages
Low R
DS (on)
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250
μ
A
500
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.5
4.5
V
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
μ
A
mA
1
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Note 2
24N50Q
26N50Q
0.23
0.20
98512G (5/01)
HiPerFET
TM
Power MOSFETs
Q-Class
TO-247 AD (IXFH)
(TAB)
G = Gate,
S = Source,
D = Drain,
TAB = Drain
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
V
DSS
500 V
500 V
I
D25
24 A
26 A
R
DS(on)
0.23
0.20
IXFH/IXFT 24N50Q
IXFH/IXFT 26N50Q
t
rr
≤
250 ns
相關(guān)PDF資料
PDF描述
IXFH26N60Q HiPerFETTM Power MOSFETs Q-Class
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IXFH28N50 HiPerRF Power MOSFETs F-Class: MegaHertz Switching
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFT26N55Q 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-Class
IXFT26N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFT26N60P 功能描述:MOSFET 600V 26A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT26N60Q 功能描述:MOSFET 28 Amps 600V 0.25 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT28N50F 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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