參數(shù)資料
型號(hào)： IXFH26N60Q
廠商： IXYS CORP
元件分類(lèi)： 功率晶體管
英文描述： HiPerFETTM Power MOSFETs Q-Class
中文描述： 26 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 107K
代理商： IXFH26N60Q
2002 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
600
600
V
V
Continuous
Transient
±
20
±
30
V
V
T
C
= 25
°
C
T
C
= 25
°
C, pulse width limited by T
JM
T
C
= 25
°
C
26
A
A
A
104
26
E
AR
E
AS
T
C
= 25
°
C
T
C
= 25
°
C
45
1.5
mJ
J
dv/dt
I
S
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
≤
I
DM
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
5
V/ns
P
D
T
J
T
JM
T
stg
360
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
T
L
1.6 mm (0.063 in) from case for 10 s
300
°
C
M
d
Mounting torque
TO-247
1.13/10 Nm/lb.in.
Weight
TO-247
TO-268
6
4
g
g
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
Low gate charge
International standard packages
Epoxy
meet
UL
94
V-0, flammability
classification
Low R
DS (on)
HDMOS
TM
process
Rugged polysilicon gate cell structure
Avalanche energy and current rated
Fast intrinsic Rectifier
Advantages
Easy to mount
Space savings
High power density
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
I
GSS
I
DSS
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 4 mA
V
GS
=
±
20 V
DC
, V
DS
= 0
600
V
2.5
4.5
V
±
200
nA
V
DS
= V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
25
1
μ
A
mA
R
DS(on)
V
GS
= 10 V, I
D
= 0.5 I
D25
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
0.25
G = Gate
S = Source
D = Drain
TAB = Drain
98635D (6/02)
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
(TAB)
G
S
IXFH 26N60Q
IXFT 26N60Q
V
DSS
I
R
DS(on)
t
rr
≤
250 ns
= 600 V
= 26 A
= 0.25
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PDF描述
IXFT26N60Q DUAL 1FORM-A SSR
IXFH28N50 HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFT28N50F HiPerRF Power MOSFETs F-Class: MegaHertz Switching
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IXFH30N40Q N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓400V,導(dǎo)通電阻0.16Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFH28N50 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerRF Power MOSFETs F-Class: MegaHertz Switching
IXFH28N50F 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH28N50Q 功能描述:MOSFET 28 Amps 500V 0.20 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH28N60P3 功能描述:MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH30N40Q 功能描述:MOSFET 30 Amps 400V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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