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參數(shù)資料
| 型號： | IXFH26N60Q |
| 廠商： | IXYS CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | HiPerFETTM Power MOSFETs Q-Class |
| 中文描述： | 26 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD |
| 封裝： | TO-247AD, 3 PIN |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 107K |
| 代理商： | IXFH26N60Q |
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
14
22
S
C
iss
C
oss
C
rss
5100
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
560
pF
210
pF
t
d(on)
t
r
t
d(off)
t
f
30
ns
V
GS
R
G
= 2.0
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32
ns
80
ns
16
ns
Q
g(on)
Q
gs
Q
gd
150
200
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
34
nC
80
nC
R
thJC
R
thCK
0.35
K/W
TO-247
0.25
K/W
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
b
b
1
b
2
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
C
D
E
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
5.20
19.81
5.72
20.32
4.50
0.205
.780
0.225
.800
.177
P
Q
3.55
5.89
3.65
6.40
.140
0.232
.144
0.252
R
S
4.32
6.15
5.49
.170
242
.216
BSC
BSC
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
TO-247 AD (IXFH) Outline
TO-268 Outline
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ. max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive; pulse width limited by T
JM
104
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
250 ns
1
μ
C
A
10
I
F
= I
S
-di/dt = 100 A/
μ
s, V
R
= 100 V
IXFH 26N60Q
IXFT 26N60Q
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
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| IXFH28N50 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
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| IXFH28N50Q | 功能描述:MOSFET 28 Amps 500V 0.20 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH28N60P3 | 功能描述:MOSFET 600V 28A 0.26Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFH30N40Q | 功能描述:MOSFET 30 Amps 400V 0.16 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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