參數(shù)資料
型號: IXFN80N50
廠商: IXYS CORP
元件分類: 功率晶體管
英文描述: HiPerFET Power MOSFETs Single Die MOSFET
中文描述: 80 A, 500 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: MINIBLOC-4
文件頁數(shù): 3/4頁
文件大?。?/td> 126K
代理商: IXFN80N50
2002 IXYS All rights reserved
T
C
- Degrees C
-50
-25
0
25
50
75
100 125 150
I
D
0
20
40
60
80
100
I
D
- Amperes
0
10
20
30
40
50
60
70
80
R
D
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
V
DS
- Volts
0
2
4
6
8
10
I
D
0
20
40
60
80
100
V
DS
- Volts
0
1
2
3
4
5
I
D
0
20
40
60
80
100
V
GS
= 10V
T
J
= 125
O
C
T
J
= 25
O
C
4V
4V
5V
T
J
= 25
o
C
T
J
= 125
o
C
V
GS
= 9V
8V
7V
6V
T
J
= 125
O
C
5V
V
GS
= 9V
8V
7V
6V
T
J
= 25
O
C
V
GS
- Volts
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
I
D
0
10
20
30
40
50
T
J
- Degrees C
25
50
75
100
125
150
R
D
1.0
1.3
1.6
1.9
2.2
2.5
2.8
I
D
=40A
I
D
= 80A
V
GS
= 10V
Figure 3. R
normalized to 0.5 I
D25
value
vs. I
D
Figure 5. Drain Current vs. Case Temperature
Figure 6. Admittance Curves
Figure 1. Output Characteristics at 25
O
C
Figure 2. Output Characteristics at 125
O
C
Figure 4. R
normalized to 0.5 I
D25
value vs. T
J
IXFN 75N50
IXFN 80N50
相關(guān)PDF資料
PDF描述
IXFN80N48 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓480V,導(dǎo)通電阻45mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFN90N30 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓300V,導(dǎo)通電阻33mΩ的N溝道增強型HiPerFET功率MOSFET)
IXFP3N80 HiPerFET Power MOSFETs
IXFP4N100Q HiPerFET Power MOSFETs Q-Class
IXFQ26N60P N-Channel Enhancement Mode Fast Recovery Diode Avalanche Rated
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN80N50P 功能描述:MOSFET 500V 80A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN80N50Q2 功能描述:MOSFET 80 Amps 500V 0.06 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN80N50Q3 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 500V/63A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN80N60P3 功能描述:MOSFET Polar3 HiPerFET Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN82N60P 功能描述:MOSFET DIODE Id82 BVdass600 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube