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參數(shù)資料
| 型號： | IXFN60N60 |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓600V,導(dǎo)通電阻75mΩ的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 60 A, 600 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | MINIBLOC-4 |
| 文件頁數(shù)： | 2/2頁 |
| 文件大小： | 71K |
| 代理商： | IXFN60N60 |
2 - 2
2000 IXYS All rights reserved
IXFN 60N60
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 15 V; I
D
= 0.5 I
D25
, pulse test
40
60
S
C
iss
C
oss
15000
1600
360
pF
pF
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
t
d(on)
t
r
t
d(off)
t
f
43
52
ns
ns
ns
ns
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
G
= 1
(External),
110
26
Q
g(on)
Q
gs
Q
gd
380
78
190
nC
nC
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
R
thJC
R
thCK
0.18
K/W
K/W
0.05
Source-Drain Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
I
SM
V
GS
= 0 V
Repetitive;
pulse width limited by T
JM
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t 300 s, duty cycle d 2 %
60
A
240
A
V
SD
1.3
V
t
rr
Q
RM
I
RM
I
F
= 25A, -di/dt = 100 A/ s, V
R
= 100 V
250
ns
C
A
1.5
10
M4 screws (4x) supplied
Dim.
Millimeter
Min.
31.50
7.80
4.09
4.09
4.09
14.91
30.12
38.00
11.68
8.92
0.76
12.60
25.15
1.98
4.95
26.54
3.94
4.72
24.59
-0.05
Inches
Min.
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
-0.002
Max.
31.88
8.20
4.29
4.29
4.29
15.11
30.30
38.23
12.22
9.60
0.84
12.85
25.42
2.13
5.97
26.90
4.42
4.85
25.07
0.1
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
miniBLOC, SOT-227 B
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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