參數(shù)資料
型號： IXFN120N20
廠商： IXYS CORP
元件分類： JFETs
英文描述： CAP 8200PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
中文描述： 120 A, 200 V, 0.017 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： PLASTIC, MINIBLOC-4
文件頁數(shù)： 1/2頁
文件大?。?/td> 69K
代理商： IXFN120N20
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
200
200
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
I
DM
I
AR
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
120
480
120
64
A
A
A
mJ
3
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
V
ISOL
600
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
-
C
50/60 Hz, RMS
I
ISOL
1 mA
Mounting torque
Terminal connection torque
t = 1 min
t = 1 s
2500
3000
V~
V~
M
d
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
Weight
30
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
200
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 3mA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 8mA
V
GS
= 20 V, V
DS
= 0
2
4 V
200 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
T
J
= 25 C
T
J
= 125 C
100 A
2 mA
17 m
R
DS(on)
96538C (7/99)
IXFN 120N20
V
DSS
I
D25
R
DS(on)
=
= 200 V
= 120 A
17 m
t
rr
250 ns
HiPerFET
TM
Power MOSFETs
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low t
rr
S
G
S
D
miniBLOC, SOT-227 B (IXFN)
E153432
G = Gate
S = Source
D = Drain
Either Source terminal at miniBLOC can be used
as Main or Kelvin Source
Features
Encapsulating epoxy meets
UL 94 V-0, flammability classification
International standard package
miniBLOC,
with Aluminium nitride
isolation
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
Fast intrinsic Rectifier
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount
Space savings
High power density
Preliminary data sheet
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFN120N20 制造商:IXYS Corporation 功能描述:MOSFET N SOT-227B
IXFN120N25 功能描述:MOSFET 120 Amps 250V 0.02 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN130N30 功能描述:MOSFET 300V 130A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN132N50P3 功能描述:MOSFET 500V 112A 0.039Ohm PolarP3 Power MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFN140N20P 功能描述:MOSFET 140 Amps 200V 0.018 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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