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參數(shù)資料
| 型號： | IXFK48N50Q |
| 廠商： | IXYS CORP |
| 元件分類： | JFETs |
| 英文描述： | CAP 10000UF 50V ELECT SCREW TERM |
| 中文描述： | 48 A, 500 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 48K |
| 代理商： | IXFK48N50Q |
1 - 2
2000 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
500
500
V
V
V
GS
V
GSM
Continuous
Transient
20
30
V
V
I
D25
T
C
= 25 C
44N50
48N50
44N50
48N50
44
48
176
192
48
A
A
A
A
A
I
DM
T
C
= 25 C, pulse width limited by T
JM
I
AR
T
C
= 25 C
E
AR
E
AS
dv/dt
T
C
= 25 C
T
C
= 25 C
I
S
I
, di/dt 100 A/ s, V
DD
V
DSS
T
J
150 C, R
G
= 2
T
C
= 25 C
60
2.5
mJ
J
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
500
W
-55 ... +150
C
C
C
150
-55 ... +150
1.6 mm (0.063 in.) from case for 10 s
300
C
Mounting torque
TO-264
0.4/6
Nm/lb.in.
PLUS 247
TO-264
6
10 g
g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
500
typ.
max.
V
DSS
V
GS
= 0 V, I
D
= 250uA
V
V
GS(th)
I
GSS
V
DS
= V
GS
, I
D
= 4mA
V
GS
= 20 V, V
DS
= 0
2.0
4.0 V
100 nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
D
= 0.5 I
D25
Note 1
100 A
2 mA
120 m
100 m
T
J
= 125 C
44N50
48N50
R
DS(on)
98612B (7/00)
PLUS 247
TM
(IXFX)
G
D
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
S
G
D
(TAB)
TO-264 AA (IXFK)
HiPerFET
TM
Power MOSFETs
Q-CLASS
Single MOSFET Die
N-Channel Enhancement Mode
Avalanche Rated, Low Qg
High dV/dt, Low t
rr
Preliminary data
Features
IXYS advanced low Q
process
Low gate charge and capacitances
- easier to drive
- faster switching
International standard packages
Low R
Rated for unclamped Inductive load
switching (UIS) rated
Molding epoxies meet UL
94
V-0
flammability classification
Applications
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and ighting controls
Advantages
PLUS 247
TM
package for clip or spring
mounting
Space savings
High power density
V
DSS
I
D25
R
DS(on)
IXFK/IXFX 48N50Q 500 V 48 A 100 m
IXFK/IXFX 44N50Q 500 V 44 A 120 m
t
rr
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IXFK48N50Q_03 | 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-CLASS |
| IXFK48N50S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 48A I(D) | TO-264VAR |
| IXFK48N55 | 功能描述:MOSFET N-CH 550V 48A TO-264AA RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:HiPerFET™ 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| IXFK48N60P | 功能描述:MOSFET 600V 48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| IXFK48N60Q3 | 功能描述:MOSFET Q3Class HiPerFET Pwr MOSFET 600V/48A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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