參數(shù)資料
型號： IXFK26N60Q
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： RELAY OPTOMOS 170MA DP 8-SMD
中文描述： 26 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-264AA
封裝： PLASTIC PACKAGE-3
文件頁數(shù)： 2/2頁
文件大?。?/td> 103K
代理商： IXFK26N60Q
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
6,306,728B1
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, pulse test
14
22
S
C
iss
C
oss
C
rss
5100
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
560
pF
210
pF
t
d(on)
t
r
t
d(off)
t
f
30
ns
V
GS
R
G
= 2.0
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
32
ns
80
ns
16
ns
Q
g(on)
Q
gs
Q
gd
150
200
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
34
nC
80
nC
R
thJC
R
thCK
0.35
K/W
TO-264
0.15
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ. max.
I
S
V
GS
= 0 V
26
A
I
SM
Repetitive; pulse width limited by T
JM
104
A
V
SD
I
= I
, V
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle
d
≤
2 %
1.5
V
t
rr
Q
RM
I
RM
250 ns
1
μ
C
A
10
I
F
= I
S
-di/dt = 100 A/
μ
s, V
R
= 100 V
TO-264 AA Outline
Millimeter
Min.
Inches
Max.
Min.
Max.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
4.82
2.54
2.00
1.12
2.39
2.90
0.53
25.91
19.81
5.13
2.89
2.10
1.42
2.69
3.09
0.83
26.16
19.96
.190
.100
.079
.044
.094
.114
.021
1.020
.780
.202
.114
.083
.056
.106
.122
.033
1.030
.786
5.46 BSC
0.00
0.00
20.32
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
.215 BSC
.000
.000
.800
.090
.125
.239
.330
.150
.070
.238
.062
0.25
0.25
20.83
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Dim.
IXFK 26N60Q
IXFX 26N60Q
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.83
2.29
1.91
5.21
2.54
2.16
.190
.090
.075
.205
.100
.085
1.14
1.91
2.92
1.40
2.13
3.12
.045
.075
.115
.055
.084
.123
0.61
20.80
15.75
0.80
21.34
16.13
.024
.819
.620
.031
.840
.635
e
L
L1
5.45 BSC
19.81
3.81
.215 BSC
.780
.150
20.32
4.32
.800
.170
Q
R
5.59
4.32
6.20
4.83
.220 0.244
.170
.190
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
4 - Drain (Collector)
PLUS 247
TM
Outline
相關PDF資料
PDF描述
IXFX26N60Q HiPerFET Power MOSFETs Q-Class
IXFK26N90 N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓900V,導通電阻0.30Ω的N溝道增強型HiPerFET功率MOSFET)
IXFK27N80Q HiPerFET Power MOSFETs Q-CLASS
IXFR27N80Q HiPerFET Power MOSFETs Q-CLASS
IXFX27N80Q HiPerFET Power MOSFETs Q-CLASS
相關代理商/技術參數(shù)
參數(shù)描述
IXFK26N90 功能描述:MOSFET 26 Amps 900V 0.3 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK27N80 功能描述:MOSFET 800V 27A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK27N80Q 功能描述:MOSFET 27 Amps 800V 0.32 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFK27N80Q_02 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs Q-CLASS
IXFK28N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
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