參數資料
型號： IXFH26N50Q
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 26 A, 500 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
封裝： PLASTIC PACKAGE-3
文件頁數： 2/4頁
文件大?。?/td> 134K
代理商： IXFH26N50Q
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
g
fs
V
DS
= 10 V; I
D
= 0.5 I
D25
, Note 2
14
24
S
C
iss
C
oss
C
rss
3900
pF
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
500
pF
130
pF
t
d(on)
t
r
t
d(off)
t
f
28
ns
V
GS
R
G
= 2
(External),
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
30
ns
55
ns
16
ns
Q
g(on)
Q
gs
Q
gd
95
nC
V
GS
= 10 V, V
DS
= 0.5 V
DSS
, I
D
= 0.5 I
D25
27
nC
40
nC
R
thJC
R
thCK
0.42
K/W
(TO-247)
0.25
K/W
Source-Drain Diode
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
I
S
V
GS
= 0 V
24N50Q
26N50Q
24
26
A
A
I
SM
Repetitive; Note1
24N50Q
26N50Q
96
A
A
104
V
SD
I
F
= I
S
, V
GS
= 0 V,
Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
1.3
V
t
rr
Q
RM
I
RM
250
ns
μ
C
A
I
F
= I
S
, -di/dt = 100 A/
μ
s, V
R
= 100 V
0.85
8
TO-247 AD Outline
Dim.
Millimeter
Min.
Inches
Min.
Max.
Max.
A
A
1
A
2
b
b
1
b
2
C
D
E
4.7
2.2
2.2
5.3
2.54
2.6
.185
.087
.059
.209
.102
.098
1.0
1.65
2.87
1.4
2.13
3.12
.040
.065
.113
.055
.084
.123
.4
.8
.016
.819
.610
.031
.845
.640
20.80
15.75
21.46
16.26
e
L
L1
P
Q
5.20
19.81
5.72
20.32
4.50
0.205 0.225
.780
.800
.177
3.55
5.89
3.65
6.40
.140
0.232 0.252
.144
R
S
4.32
6.15 BSC
5.49
.170
242 BSC
.216
Terminals:
1 - Gate
2 - Drain
3 - Source
Tab - Drain
1 2 3
Min Recommended Footprint
TO-268 Outline
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.752
.106
.055
L2
L3 0.25 BSC .010 BSC
L4
3.80
4.10
1.00
1.15
.039
.045
.150
.161
Note 1. Pulse width limited by T
JM
2. Pulse test, t
≤
300
μ
s, duty cycle d
≤
2 %
IXFH 24N50Q
IXFH 26N50Q
IXFT 24N50Q
IXFT 26N50Q
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相關代理商/技術參數
參數描述
IXFH26N50SN 制造商:IXYS Corporation 功能描述:Trans MOSFET N-CH 500V 26A 3-Pin(3+Tab) TO-247AD
IXFH26N55Q 功能描述:MOSFET 26 Amps 550V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH26N60 制造商:IXYS 制造商全稱:IXYS Corporation 功能描述:HiPerFET Power MOSFETs
IXFH26N60P 功能描述:MOSFET 600V 26A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFH26N60Q 功能描述:MOSFET 600V 26A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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