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參數(shù)資料
| 型號(hào)： | IXFH15N80Q |
| 廠商： | IXYS CORP |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | N-Channel Enhancement Mode HiPerFET Power MOSFET(最大漏源擊穿電壓800V,導(dǎo)通電阻0.60Ω的N溝道增強(qiáng)型HiPerFET功率MOSFET) |
| 中文描述： | 15 A, 800 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247 |
| 封裝： | TO-247, 3 PIN |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 111K |
| 代理商： | IXFH15N80Q |
1 - 4
2000 IXYS All rights reserved
Symbol
V
DSS
V
DGR
V
GS
V
GSM
I
D25
I
DM
I
AR
E
AR
E
AS
Test Conditions
T
J
= 25 C to 150 C
T
J
= 25 C to 150 C; R
GS
= 1 M
Continuous
Transient
Maximum Ratings
800
800
V
V
20
30
V
V
T
C
= 25 C
T
C
= 25 C, pulse width limited by T
JM
T
C
= 25 C
T
C
= 25 C
T
C
= 25 C
15
60
15
A
A
A
30
1.0
mJ
J
dv/dt
I
S
T
J
T
C
= 25 C
I
DM
, di/dt 100 A/ s, V
DD
V
DSS
,
150 C, R
G
= 2
5
V/ns
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
C
C
C
-55 ... +150
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
C
Mounting torque
1.13/10 Nm/lb.in.
TO-247
TO-268
6
4
g
g
TO-247 AD (IXFH)
G = Gate
S = Source
D = Drain
TAB = Drain
(TAB)
98514B (7/00)
Symbol
(T
J
= 25 C, unless otherwise specified)
V
DSS
V
GS
= 0 V, I
D
= 3 mA
Test Conditions
Characteristic Values
Min. Typ.
Max.
800
V
V
GS(th)
V
DS
= V
GS
, I
D
= 4 mA
2.0
4.5
V
I
GSS
V
GS
= 20 V
DC
, V
DS
= 0
100
nA
I
DSS
V
DS
= V
DSS
V
GS
= 0 V
V
= 10 V, I
= 0.5 I
Pulse test, t 300 s, duty cycle d 2 %
T
J
= 25 C
T
J
= 125 C
25
A
1
mA
R
DS(on)
0.60
IXFH 15N80Q
IXFT 15N80Q
TO-268 (D3) (IXFT) Case Style
(TAB)
G
S
HiPerFET
TM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Q
g
Features
IXYS advanced low Q
process
International standard packages
Low R
Unclamped Inductive Switching (UIS)
rated
Fast switching
Molding epoxies meet UL
94
V-0
flammability classification
Advantages
Easy to mount
Space savings
High power density
V
DSS
I
D25
R
DS(on)
t
rr
= 800 V
= 15 A
= 0.60
250 ns
IXYS reserves the right to change limits, test conditions, and dimensions.
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