參數(shù)資料
型號(hào)： IXFT24N50
廠商： IXYS CORP
元件分類： JFETs
英文描述： HiPerFET Power MOSFETs
中文描述： 24 A, 500 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-268AA
封裝： D3PAK-3
文件頁數(shù)： 1/4頁
文件大小： 158K
代理商： IXFT24N50
1999 IXYS All rights reserved
Symbol
Test Conditions
Maximum Ratings
V
DSS
V
DGR
V
GS
V
GSM
I
D25
T
J
= 25
°
C to 150
°
C
T
J
= 25
°
C to 150
°
C; R
GS
= 1 M
Continuous
Transient
500
500
V
V
±
20
±
30
V
V
T
C
= 25
°
C
21N50
24N50
26N50
21N50
24N50
26N50
21N50
24N50
26N50
21
24
26
84
96
A
A
A
A
A
A
A
A
A
I
DM
T
C
= 25
°
C, pulse width limited by T
JM
104
21
24
26
I
AR
T
C
= 25
°
C
E
AR
dv/dt
T
C
= 25
°
C
I
S
≤
I
, di/dt
≤
100 A/
μ
s, V
DD
≤
V
DSS
,
T
J
≤
150
°
C, R
G
= 2
T
C
= 25
°
C
30
mJ
5
V/
n
s
P
D
T
J
T
JM
T
stg
T
L
M
d
Weight
300
W
-55 ... +150
°
C
°
C
°
C
150
-55 ... +150
1.6 mm (0.062 in.) from case for 10 s
300
°
C
Mounting torque
1.13/10 Nm/lb.in.
TO-204 = 18 g, TO-247 = 6 g
Symbol
Test Conditions
Characteristic Values
(T
J
= 25
°
C, unless otherwise specified)
min.
typ.
max.
V
DSS
V
GS(th)
V
GS
= 0 V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 4 mA
500
V
V
2
4
I
GSS
V
GS
=
±
20 V
DC
, V
DS
= 0
±
100
nA
I
DSS
V
DS
= 0.8 V
DSS
V
GS
= 0 V
T
J
= 25
°
C
T
J
= 125
°
C
200
μ
A
mA
1
N-Channel Enhancement Mode
High dv/dt, Low t
rr
, HDMOS
TM
Family
TO-247 AD (IXFH)
TO-204 AE (IXFM)
D
G
Features
International standard packages
Low R
HDMOS
TM
process
Rugged polysilicon gate cell structure
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
Fast intrinsic Rectifier
Applications
DC-DC converters
Synchronous rectification
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
AC motor control
Temperature and lighting controls
Low voltage relays
Advantages
Easy to mount with 1 screw (TO-247)
(isolated mounting screw hole)
High power surface mountable package
High power density
G = Gate,
S = Source,
D = Drain,
TAB = Drain
91525H (9/99)
(TAB)
V
DSS
500 V 21 A 0.25
500 V 24 A 0.23
500 V 26 A 0.20
t
rr
≤
250 ns
I
D25
R
DS(on)
IXFH/IXFM21N50
IXFH/IXFM/IXFT24N50
IXFH/IXFT26N50
HiPerFET
TM
Power MOSFETs
TO-268 (D3) Case Style
(TAB)
G
S
相關(guān)PDF資料
PDF描述
IXFT26N50 HiPerFET Power MOSFETs
IXFH26N50 1-Form-A solid state relay, bridge rectifier, Darlington transistor and optocoupler and zener diods- half wave
IXFM26N50 Dual Pole Normally Open: 2-Form-A
IXFM21N50 HiPerFET Power MOSFETs
IXFM21N60 HIPERFET Power MOSFTETs
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IXFT24N50Q 功能描述:MOSFET 24 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT24N80P 功能描述:MOSFET 24 Amps 800V 0.4 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT24N90P 功能描述:MOSFET PolarHV HiPerFETs 500V-1.2Kv Red Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT26N50 功能描述:MOSFET 26 Amps 500V 0.23 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
IXFT26N50Q 功能描述:MOSFET 26 Amps 500V 0.2 Rds RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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