參數(shù)資料
型號： IXBH16N170A
廠商： IXYS CORP
元件分類： 功率晶體管
英文描述： High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
中文描述： 16 A, 1700 V, N-CHANNEL IGBT, TO-247AD
封裝： TO-247AD, 3 PIN
文件頁數(shù)： 2/2頁
文件大?。?/td> 51K
代理商： IXBH16N170A
2000 IXYS All rights reserved
2 - 2
Symbol
Test Conditions
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
typ.
max.
g
fs
I
Pulse test, t 300 s, duty cycle 2 %
= I
; V
= 10 V,
8
12.5
S
C
ies
C
oes
C
res
1400
pF
pF
pF
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz
90
31
Q
g
Q
ge
Q
gc
65
13
22
nC
nC
nC
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
t
d(on)
t
ri
t
d(off)
t
fi
E
off
15
25
ns
ns
ns
ns
mJ
160
50
1.2
250
100
2.5
t
d(on)
t
ri
E
on
t
d(off)
t
fi
15
28
2.0
220
150
ns
ns
mJ
ns
ns
E
off
2.6
mJ
R
thJC
R
thCK
0.83 K/W
(TO-247)
0.25
K/W
Reverse Diode
Characteristic Values
(T
J
= 25 C, unless otherwise specified)
min.
Symbol
Test Conditions
typ.
max.
V
F
I
F
t
= I
, V
= 0 V, Pulse test,
< 300 us, duty cycle d < 2%
5.0
V
I
RM
t
rr
I
F
v
R
= I
, V
GE
= 0 V, -di
F
/dt = 50 A/us
= 100V
10
A
360
ns
Inductive load, T
J
= 125 C
I
C
= I
C90
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Inductive load, T
J
= 25 C
I
C
= I
, V
GE
= 15 V
V
CE
= 0.8 V
CES
, R
G
= R
off
= 10
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
IXBH 16N170A
IXBT 16N170A
Remarks: Switching times may
increase for V
(Clamp) > 0.8 V
CES
,
higher T
J
or increased R
G
TO-247 AD Outline
Dim. Millimeter
Min.
Inches
Min.
Max.
Max.
A
B
19.81 20.32
20.80 21.46
0.780 0.800
0.819 0.845
C
D
15.75 16.26
3.55
0.610 0.640
0.140 0.144
3.65
E
F
4.32
5.4
5.49
6.2
0.170 0.216
0.212 0.244
G
H
1.65
2.13
4.5
0.065 0.084
-
-
0.177
J
K
1.0
10.8
1.4
11.0
0.040 0.055
0.426 0.433
L
M
4.7
0.4
5.3
0.8
0.185 0.209
0.016 0.031
N
1.5
2.49
0.087 0.102
Dim.
Millimeter
Min.
4.9
2.7
.02
1.15
1.9
.4
13.80
15.85
13.3
e 5.45 BSC .215 BSC
H
18.70
19.10
L
2.40
2.70
L1
1.20
1.40
L2
1.00
1.15
L3 0.25 BSC .010 BSC
L4
3.80
4.10
Inches
Min.
.193
.106
.001
.045
.75
.016
.543
.624
.524
Max.
5.1
2.9
.25
1.45
2.1
.65
14.00
16.05
13.6
Max.
.201
.114
.010
.057
.83
.026
.551
.632
.535
A
A
1
A
2
b
b
2
C
D
E
E
1
.736
.094
.047
.039
.752
.106
.055
.045
.150
.161
TO-268AA (D
3
PAK)
Min. Recommended Footprint
Notes:
1. Device must be heatsunk for high
temperature leakage current
measurements to avoid thermal
runaway.
2. Pulse test, t 300 s, duty cycle 2 %.
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,881,106
5,017,508
4,850,072
4,931,844
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,486,715
5,381,025
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