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1
2004 IXYS All rights reserved
IXBD4410
IXBD4411
ISOSMART
TM
Half Bridge Driver Chipset
IXYS reserves the right to change limits, test conditions and dimensions.
Type
IXBD4410PI
IXBD4411PI
IXBD4410SI
IXBD4411SI
Description
Full-Feature Low-Side Driver
Full-Feature High-Side Driver 16-Pin P-DIP
Full-Feature Low-Side Driver
Full-Feature High-Side Driver 16-Pin SO
Package
16-Pin P-DIP
Temperature Range
-40 to +85
°
C
-40 to +85
°
C
-40 to +85
°
C
-40 to +85
°
C
16-Pin SO
The IXBD4410/IXBD4411 ISOSMART
chipset is designed to control the gates
of two Power MOSFETs or Power
IGBTs that are connected in a half-
bridge (phase-leg) configuration for
driving multiple-phase motors, or used
in applications that require half-bridge
power circuits. The IXBD4410/
IXBD4411 is a full-feature chipset
consisting of two 16-Pin DIP or SO
devices interfaced and isolated by two
small-signal ferrite pulse transformers.
The small-signal transformers provide
greater than 1200 V isolation.
Even with commutating noise ambients
greater
than
±
50
V/ns
and
up
to
1200
V
potentials, this chipset establishes
error-free two-way communications
between the system ground-reference
IXBD4410 and the inverter output-
reference IXBD4411. They incorporate
undervoltage V
or V
lockout and
overcurrent or desaturation shutdown
to protect the IGBT or Power MOSFET
devices from damage.
The chipset provides the necessary
gate drive signals to fully control the
grounded-source low-side power
device as well as the floating-source
high-side power device. Additionally,
the IXBD4410/4411 chipset provides a
negative-going, off-state gate drive
signal for improved turn-off of IGBTs or
Power MOSFETs and a system logic-
compatible status fault output FLT to
indicate overcurrent or desaturation,
and undervoltage V
or V
. During a
status fault, both chipset keep their
respective gate drive outputs off; at
V
EE
.
540 V-
Features
z
1200 V or greater low-to-high side
isolation.
z
Drives Power Systems Operating on
up to 575 V AC mains
z
dv/dt immunity of greater than
±
50V/ns
z
Proprietary low-to-high side level
translation and communication
z
On-chip negative gate-drive supply
to ensure Power MOSFET or IGBT
turn-off and to prevent gate noise
interference
z
5 V logic compatible HCMOS inputs
with hysteresis
z
Available in either the 16-Pin DIP or
the 16-Pin wide-body, small-outline
plastic package
z
20 ns switching time with 1000 pF
load; 100 ns switching time with
10,000 pF load
z
100 ns propagation delay time
z
2 A peak output drive capability
z
Self shut-down of output in response
to over-current or short-circuit
z
Under-voltage and over-voltage V
DD
lockout protection
z
Protection from cross conduction of
the half bridge
z
Logic compatible fault indication
from both low and high-side driver
Applications
z
1- or 3-Phase Motor Controls
z
Switch Mode Power Supplies
(SMPS)
z
Uninterruptible Power Supplies
(UPS)
z
Induction Heating and Welding
Systems
z
Switching Amplifiers
z
General Power Conversion Circuits