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參數(shù)資料
| 型號： | ISL9N308AD3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз |
| 中文描述： | 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大?。?/td> | 140K |
| 代理商： | ISL9N308AD3ST |
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
Figure 11. Capacitance vs Drain to Source
Voltage
Figure 12. Gate Charge Waveforms for Constant
Gate Currents
Figure 13. Switching Time vs Gate Resistance
Figure 14. Switching Time vs Gate Resistance
Typical Characteristic
(Continued)
100
1000
0.1
1
10
30
4000
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
10
20
30
40
50
V
G
,
Q
g
, GATE CHARGE (nC)
I
D
= 14A
WAVEFORMS IN
DESCENDING ORDER:
I
D
= 48A
V
DD
= 15V
0
50
100
150
200
250
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
V
GS
= 4.5V, V
DD
= 15V, I
D
= 15A
t
d(OFF)
t
r
t
d(ON)
t
f
0
50
100
150
200
250
300
350
0
10
20
30
40
50
S
R
GS
, GATE TO SOURCE RESISTANCE (
)
t
d(OFF)
t
r
t
f
V
GS
= 10V, V
DD
= 15V, I
D
= 15A
t
d(ON)
Test Circuits and Waveforms
Figure 15. Unclamped Energy Test Circuit
Figure 16. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
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| ISL9N310AP3 | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| ISL9N310AS3 | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL9N308AP3 | 功能描述:MOSFET N-Ch Trench MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N308AS3ST | 功能描述:MOSFET N-Ch UltraFET Trench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3ST_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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