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參數(shù)資料
| 型號： | ISL9N308AD3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз |
| 中文描述： | 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 140K |
| 代理商： | ISL9N308AD3ST |
2002 Fairchild Semiconductor Corporation
January 2002
Rev. B, January 2002
I
ISL9N308AP3/ISL9N308AS3ST
N-Channel Logic Level UltraFET
30V, 75A, 8m
Trench MOSFETs
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0064
(Typ), V
GS
= 10V
r
DS(ON)
= 0.010
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 24nC, V
GS
= 5V
Q
gd
(Typ) = 8nC
C
ISS
(Typ) = 2600pF
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
Parameter
Ratings
30
±
20
Units
V
V
V
V
DSS
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
Continuous (T
Continuous (T
Pulsed
Power dissipation
Derate above 25
Operating and Storage Temperature
GS
I
D
75
48
15
A
A
A
A
W
C
= 25
= 100
= 25
o
C, V
o
C, V
o
C, V
GS
= 10V)
= 4.5V)
= 10V, R
C
GS
C
GS
θ
JC
= 43
o
C/W)
Figure 4
100
0.67
-55 to 175
P
D
o
C
W/
o
o
C
T
J
, T
STG
C
R
R
R
θ
JC
Thermal Resistance Junction to Case TO-220, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
1.5
62
43
o
C/W
o
C/W
o
C/W
θ
JA
θ
JA
2
copper pad area
Device Marking
N308AS
N308AP
Device
Package
TO-263AB
TO-220AB
Reel Size
330mm
Tube
Tape Width
24mm
N/A
Quantity
800 units
50
ISL9N308AS3ST
ISL9N308AP3
D
G
S
TO-263AB
TO-220AB
GATE
SOURCE
DRAIN
(FLANGE)
DRAIN
(FLANGE)
GATE
SOURDRAIN
PWM Optimized
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| ISL9N310AS3ST | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| ISL9N310AD3 | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| ISL9N310AD3ST | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| ISL9N310AP3 | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| ISL9N310AS3 | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL9N308AP3 | 功能描述:MOSFET N-Ch Trench MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N308AS3ST | 功能描述:MOSFET N-Ch UltraFET Trench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3ST_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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