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參數(shù)資料
| 型號： | ISL9N308AD3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level UltraFET Trench Power MOSFETs 30V, 50A, 8mз |
| 中文描述： | 50 A, 30 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 封裝： | DPAK-3 |
| 文件頁數(shù)： | 10/11頁 |
| 文件大小： | 140K |
| 代理商： | ISL9N308AD3ST |
2002 Fairchild Semiconductor Corporation
Rev. B, January 2002
I
SPICE Thermal Model
REV 23 Sept 2000
ISL9N308AT
CTHERM1 th 6 2.0e-4
CTHERM2 6 5 3.0e-3
CTHERM3 5 4 3.4e-3
CTHERM4 4 3 4.0e-3
CTHERM5 3 2 1.0e-2
CTHERM6 2 tl 5.0e-2
RTHERM1 th 6 1.5e-3
RTHERM2 6 5 5.5e-3
RTHERM3 5 4 5.2e-2
RTHERM4 4 3 3.5e-1
RTHERM5 3 2 3.8e-1
RTHERM6 2 tl 4.1e-1
SABER Thermal Model
SABER thermal model ISL9N308AT
template thermal_model th tl
thermal_c th, tl
{
ctherm.ctherm1 th 6 = 2.0e-4
ctherm.ctherm2 6 5 = 3.0e-3
ctherm.ctherm3 5 4 = 3.4e-3
ctherm.ctherm4 4 3 = 4.0e-3
ctherm.ctherm5 3 2 = 1.0e-2
ctherm.ctherm6 2 tl = 5.0e-2
rtherm.rtherm1 th 6 = 1.5e-3
rtherm.rtherm2 6 5 = 5.5e-3
rtherm.rtherm3 5 4 = 5.2e-2
rtherm.rtherm4 4 3 = 3.5e-1
rtherm.rtherm5 3 2 = 3.8e-1
rtherm.rtherm6 2 tl = 4.1e-1
}
RTHERM4
RTHERM6
RTHERM5
RTHERM3
RTHERM2
RTHERM1
CTHERM4
CTHERM6
CTHERM5
CTHERM3
CTHERM2
CTHERM1
tl
2
3
4
5
6
th
JUNCTION
CASE
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| ISL9N310AP3 | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
| ISL9N310AS3 | N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| ISL9N308AP3 | 功能描述:MOSFET N-Ch Trench MOSFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N308AS3ST | 功能描述:MOSFET N-Ch UltraFET Trench Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N310AD3ST_NL | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
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