參數(shù)資料
型號: ISL9N2357D3ST
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET
中文描述: 35 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
文件頁數(shù): 5/9頁
文件大?。?/td> 260K
代理商: ISL9N2357D3ST
2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1
NOTE: Refer to Fairchild Application Notes AN7254 and AN7260.
FIGURE 11. GATE CHARGE WAVEFORMS FOR CONSTANT GATE CURRENT
Typical Performance Curves
(Continued)
0
2
4
6
8
10
0
20
40
60
80
100
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 15V
I
D
= 35A
I
D
= 20A
I
D
= 5A
WAVEFORMS IN
DESCENDING ORDER:
Test Circuits and Waveforms
FIGURE 12. GATE CHARGE TEST CIRCUIT
FIGURE 13. GATE CHARGE WAVEFORMS
FIGURE 14. SWITCHING TIME TEST CIRCUIT
FIGURE 15. SWITCHING TIME WAVEFORM
R
L
V
GS
+
-
V
DS
V
DD
DUT
I
g(REF)
V
DD
Q
g(TH)
Q
gs
V
GS
= 2V
Q
g(10)
V
GS
= 10V
Q
g(TOT)
V
GS
= 20V
V
DS
V
GS
I
g(REF)
0
0
Q
gd
V
GS
R
L
R
GS
DUT
+
-
V
DD
V
DS
V
GS
t
ON
t
d(ON)
t
r
90%
10%
V
DS
90%
10%
t
f
t
d(OFF)
t
OFF
90%
50%
50%
10%
PULSE WIDTH
V
GS
0
0
ISL9N2357D3ST
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ISL9N302AS3 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N302AS3ST 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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