參數(shù)資料
型號(hào)： ISL9N303AP3
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： RECTIFIER SCHOTTKY DUAL COMMON-CATHODE 30A 40V 250A-Ifsm 0.55Vf 1A-IR D2PAK 800/REEL-13
中文描述： 75 A, 30 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
封裝： TO-220AB, 3 PIN
文件頁數(shù)： 1/11頁
文件大小： 269K
代理商： ISL9N303AP3
2002 Fairchild Semiconductor Corporation
September 2002
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3, Rev. C1
I
ISL9N303AP3 / ISL9N303AS3ST / ISL9N303AS3
N-Channel Logic Level UltraFET Trench MOSFETs
30V, 75A, 3.2m
General Description
This device employs a new advanced trench MOSFET
technology and features low gate charge while maintaining
low on-resistance.
Optimized for switching applications, this device improves
the overall efficiency of DC/DC converters and allows
operation to higher switching frequencies.
Applications
DC/DC converters
Features
Fast switching
r
DS(ON)
= 0.0026
(Typ), V
GS
= 10V
r
DS(ON)
= 0.004
(Typ), V
GS
= 4.5V
Q
g
(Typ) = 61nC, V
GS
= 5V
Q
gd
(Typ) = 17nC
C
ISS
(Typ) = 7000pF
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
Package Marking and Ordering Information
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V)
Continuous (T
C
= 100
o
C, V
GS
= 4.5V)
Continuous (T
C
= 25
o
C, V
GS
= 10V, R
θ
JA
= 43
o
C/W)
Pulsed
Power dissipation
Derate above
Operating and Storage Temperature
I
D
75
75
25
A
A
A
Figure 4
215
1.43
-55 to 175
P
D
W
W/
o
C
o
C
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-220, TO-262, TO-263
Thermal Resistance Junction to Ambient TO-263, 1in
2
copper pad area
0.7
62
43
o
C/W
o
C/W
o
C/W
Device Marking
N303AS
N303AP
N303AS
Device
Package
TO-263AB
TO-220AB
TO-262AA
Reel Size
330mm
Tube
Tube
Tape Width
24mm
N/A
N/A
Quantity
800 units
50 units
50 units
ISL9N303AS3ST
ISL9N303AP3
ISL9N303AS3
D
G
S
PWM Optimized
DRAIN
(FLANGE)
DRAIN
SOURCE
GATE
TO-262AB
TO-263AB
TO-220AB
DRAIN
(FLANGE)
DRAIN
GATE
GATE
SOURCE
SOURCE
DRAIN
(FLANGE)
相關(guān)PDF資料
PDF描述
ISL9N303AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз
ISL9N303AS3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 3.2mз
ISL9N304AS3ST N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mз
ISL9N304AP3 N-Channel Logic Level UltraFET Trench MOSFETs 30V, 75A, 4.5mз
ISL9N306AD3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs 30V, 50A, 6mз
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ISL9N303AP3_Q 功能描述:MOSFET N-Ch UltraFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N303AS3 功能描述:MOSFET 30V 75a 0.0032 Ohm N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N303AS3ST 功能描述:MOSFET N-Ch UltraFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N304AP3 功能描述:MOSFET 30V 75a 4.5 Ohm Logic Level N-Ch RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
ISL9N304AP3_NF060 功能描述:MOSFET Single, N-Ch 30V, 0.0045Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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