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參數資料
| 型號： | ISL9N2357D3ST |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V, 0.007 Ohm, 35A, N-Channel UltraFET Trench Power MOSFET |
| 中文描述： | 35 A, 30 V, 0.007 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| 文件頁數： | 1/9頁 |
| 文件大小： | 260K |
| 代理商： | ISL9N2357D3ST |
2002 Fairchild Semiconductor Corporation
ISL9N2357D3ST Rev. B1
ISL9N2357D3ST
30V, 0.007 Ohm, 35A, N-Channel
UltraFET
Trench Power MOSFET
UltraFET
Trench from Fairchild is a new advanced
MOSFET technology that achieves the lowest possible on-
resistance per silicon area while maintaining fast switching
and low gate charge. The reduced conduction and switching
losses extend battery life in notebook PCs, cellular
telephones and other portable information appliances and
improve the overall efficiency of high frequency DC-DC
converters used to power the latest microprocessors.
Packaging
ISL9N2357D3ST
JEDEC TO-252AA
Features
r
DS(ON)
= 0.006
Typical
,
V
GS
=
10V
Q
g
Total 85nC Typical,
V
GS
= 10V
Q
gd
16nC Typical
C
ISS
5600pF Typical
Symbol
GATE
SOURCE
DRAIN (FLANGE)
Ordering Information
PART NUMBER
PACKAGE
BRAND
ISL9N2357D3ST
TO-252AA
N2357D
NOTE: When ordering, use the entire part number.
e.g., ISL9N2357D3ST.
UltraFET
Trench
D
G
S
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL
PARAMETER
ISL9N2357D3ST
UNITS
V
DSS
V
DGR
V
GS
Drain to Source Voltage (Note 1)
30
V
Drain to Gate Voltage (R
GS
= 20k
) (Note 1)
Gate to Source Voltage
30
V
±
20
V
I
D
I
D
I
DM
P
D
Drain Current
Continuous (T
C
= 25
o
C, V
GS
= 10V) (Figure 2)
Continuous (T
C
= 100
o
C, V
GS
= 10V)
Pulsed Drain Current
35
35
Figure 4
A
A
A
Power Dissipation
Derate Above 25
o
C
100
0.67
W
W/
o
C
o
C
T
J
, T
STG
Operating and Storage Temperature
-55 to 175
T
L
T
pkg
Maximum Temperature for Soldering
Leads at 0.063in (1.6mm) from Case for 10s
Package Body for 10s, See Techbrief TB334
300
260
o
C
o
C
THERMAL SPECIFICATIONS
R
θ
JC
R
θ
JA
Thermal Resistance Junction to Case, TO-252
1.5
o
C/W
o
C/W
Thermal Resistance Junction to Ambient TO-252
100
NOTE:
1. T
J
= 25
o
C to 150
o
C.
CAUTION:
Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Data Sheet
June 2002
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相關代理商/技術參數 |
參數描述 |
|---|---|
| ISL9N302AP3 | 功能描述:MOSFET N-Channel PWM Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N302AS3 | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N302AS3ST | 功能描述:MOSFET N-Ch LL UltraFET PWM Optimized RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N303AP3 | 功能描述:MOSFET N-Ch UltraFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| ISL9N303AP3_Q | 功能描述:MOSFET N-Ch UltraFET Logic Level RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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