參數(shù)資料
型號: IS93C56-3GRI
廠商: INTEGRATED SILICON SOLUTION INC
元件分類: DRAM
英文描述: 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM
中文描述: 128 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO8
封裝: SO-8
文件頁數(shù): 1/10頁
文件大?。?/td> 83K
代理商: IS93C56-3GRI
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. G
04/26/01
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any
errors which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
IS93C56-3
2,048-BIT SERIAL ELECTRICALLY
ERASABLE PROM
ISSI
OVERVIEW
The IS93C56-3 is a low cost 2,048-bit, non-volatile, serial
E
2
PROM. It is fabricated using
ISSI’s
advanced CMOS
E
2
PROM technology. The IS93C56-3 provides efficient
non-volatile read/write memory arranged as 128 registers
of 16 bits each. Seven 11-bit instructions control the
operation of the device, which includes read, write, and
mode enable functions. The data out pin (D
OUT
) indicates
the status of the device during in the self-timed non-
volatile programming cycle.
The self-timed write cycle includes an automatic erase-
before-write capability. To protect against inadvertent
writes, the WRITE instruction is accepted only while the
chip is in the write enabled state. Data is written in 16 bits
per write instruction into the selected register. If Chip
Select (CS) is brought HIGH after initiation of the write
cycle, the Data Output (D
OUT
) pin will indicate the READY/
BUSY status of the chip.
APPLICATIONS
The IS93C56-3 is ideal for high-volume applications
requiring low power and low density storage. This device
uses a low cost, space saving 8-pin package. Candidate
applications include robotics, alarm devices, electronic
locks, meters and instrumentation settings.
MARCH 2001
FUNCTIONAL BLOCK DIAGRAM
FEATURES
State-of-the-art architecture
— Non-volatile data storage
— Low voltage operation:
3.0V (Vcc = 2.7V to 6.0V)
— Full TTL compatible inputs and outputs
— Auto increment for efficient data dump
Low voltage read operation
— Down to 2.7V
Hardware and software write protection
— Defaults to write-disabled state at power-up
— Software instructions for write-enable/disable
Advanced low voltage CMOS E
2
PROM
technology
Versatile, easy-to-use Interface
— Self-timed programming cycle
— Automatic erase-before-write
— Programming status indicator
— Word and chip erasable
— Stop SK anytime for power savings
Durable and reliable
— 10-year data retention after 100K write cycles
— 100,000 write cycles
— Unlimited read cycles
CS
SK
D
IN
D
OUT
DUMMY
BIT
R/W
AMPS
DATA
REGISTER
(16 BITS)
ADDRESS
REGISTER
1 OF 128
DECODER
WRITE
ENABLE
HIGH VOLTAGE
GENERATOR
INSTRUCTION
DECODE,
CONTROL,
AND
CLOCK
GENERATION
INSTRUCTION
REGISTER
(11 BITS)
EEPROM
ARRAY
(128 X 16)
相關(guān)PDF資料
PDF描述
IS93C56-3P 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C56-3PI 2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C56-3 2,048-Bit Serial EEPROM(2KB串行EEPROM)
IS93C56A 2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C56A-2GRI 2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS93C56-3P 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C56-3PI 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2,048-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C56A 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:2K-BIT/4K-BIT SERIAL ELECTRICALLY ERASABLE PROM
IS93C56A-2GRI 功能描述:電可擦除可編程只讀存儲器 1.8V 2Kb Industrial Temp RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8
IS93C56A-2GRI-TR 功能描述:電可擦除可編程只讀存儲器 1.8V 2Kb Industrial Temp RoHS:否 制造商:Atmel 存儲容量:2 Kbit 組織:256 B x 8 數(shù)據(jù)保留:100 yr 最大時鐘頻率:1000 KHz 最大工作電流:6 uA 工作電源電壓:1.7 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOIC-8