參數(shù)資料
型號(hào): IS62VV25616LL-85T
英文描述: x16 SRAM
中文描述: x16的SRAM
文件頁(yè)數(shù): 5/10頁(yè)
文件大小: 88K
代理商: IS62VV25616LL-85T
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. A
11/01/01
5
IS62VV25616LL
ISSI
READ CYCLE SWITCHING CHARACTERISTICS
(1)
(Over Operating Range)
-70
-85
Symbol
t
RC
t
AA
t
OHA
t
ACE
t
DOE
t
HZOE
(2)
t
LZOE
(2)
t
HZCE
(2)
t
LZCE
(2)
t
BA
t
HZB
t
LZB
Notes:
1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 0.9V, input pulse levels of 0.4 to 1.4V and
output loading specified in Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
Parameter
Min.
Max.
Min.
Max.
Unit
Read Cycle Time
70
85
ns
Address Access Time
70
85
ns
Output Hold Time
10
10
ns
CE
Access Time
70
85
ns
OE
Access Time
35
40
ns
OE
to High-Z Output
25
25
ns
OE
to Low-Z Output
5
5
ns
CE
to High-Z Output
0
25
0
25
ns
CE
to Low-Z Output
10
10
ns
LB
,
UB
Access Time
70
85
ns
LB
,
UB
to High-Z Output
0
25
0
25
ns
LB
,
UB
to Low-Z Output
0
0
ns
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-70
-85
Symbol
Parameter
Test Conditions
Min. Max.
Min. Max.
Unit
I
CC
Vcc Dynamic Operating V
CC
= Max.,
Supply Current
Com.
Ind.
20
25
15
20
mA
I
OUT
= 0 mA, f = f
MAX
I
CC
1
Operating Supply
Current
V
CC
= Max.,
I
OUT
= 0 mA, f = 1 MH
Z
Com.
Ind.
3
3
3
3
mA
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
V
IH
, f = 0
Com.
Ind.
0.3
0.3
0.3
0.3
mA
OR
ULB Control
Vcc = Max., V
IN
= V
IH
or V
IL
CE
= V
IL
, f = 0,
UB
= V
IH
,
LB
= V
IH
I
SB
2
CMOS Standby
Current (CMOS Inputs)
CE
V
CC
0.2V,
V
CC
= Max.,
Com.
Ind.
10
10
10
10
μA
V
IN
V
CC
0.2V, or
V
IN
0.2V, f = 0
OR
ULB Control
V
CC
= Max.,
CE
= V
IL
V
IN
0.2V, f = 0;
UB
/
LB
= V
CC
0.2V
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
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