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參數(shù)資料
| 型號(hào)： | IS62VV25616LL-85T |
| 英文描述： | x16 SRAM |
| 中文描述： | x16的SRAM |
| 文件頁(yè)數(shù)： | 1/10頁(yè) |
| 文件大小： | 88K |
| 代理商： | IS62VV25616LL-85T |
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
11/01/01
1
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. Copyright 2001, Integrated Silicon Solution, Inc.
IS62VV25616LL
256K x 16 LOW VOLTAGE, 1.8V ULTRA
LOW POWER CMOS STATIC RAM
ISSI
NOVEMBER 2001
FEATURES
High-speed access time: 70, 85, ns
CMOS low power operation
– 36 mW (typical) operating
– 9 μW (typical) CMOS standby
Single 1.7V-1.95V V
CC
power supply
Fully static operation: no clock or refresh
required
Three state outputs
Data control for upper and lower bytes
Available in the 44-pin TSOP (Type II) and
48-pin mini BGA (7.2mm x 8.7mm)
DESCRIPTION
The
ISSI
IS62VV25616LL is a high-speed, 4,194,304 bit
static RAMs organized as 262,144 words by 16 bits. They
are fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
For the IS62VV25616LL, when
CE
is HIGH (deselected)
or
CE
is low and both
LB
and
UB
are HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs,
CE
and
OE
. The active LOW
Write Enable (
WE
) controls both writing and reading of the
memory. A data byte allows Upper Byte (
UB
) and Lower
Byte (
LB
) access.
The IS62VV25616LL is packaged in the JEDEC standard
44-pin
TSOP
(Type II)
and
48-pin
mini BGA
(7.2mm x 8.7mm).
FUNCTIONAL BLOCK DIAGRAM
A0-A17
CE
OE
WE
UB
LB
256K x 16
MEMORY ARRAY
DECODER
COLUMN I/O
CONTROL
CIRCUIT
GND
VCC
I/O
DATA
CIRCUIT
I/O0-I/O7
Lower Byte
I/O8-I/O15
Upper Byte
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| IS62VV25616LL-85TI | x16 SRAM |
| IS6410 | AREA SELF-SCANNED PHOTODIODE ARRAY |
| IS651A | PHOTOTRANSISTOR | NPN | LED-7B |
| IS655A | PHOTOTRANSISTOR | NPN | 800NM PEAK WAVELENGTH | LED-2B |
| IS657A | SCHMITT-TRIGGER OUTPUT PHOTO IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS62VV25616LL-85TI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x16 SRAM |
| IS62WV102416ALL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS62WV102416ALL-35MI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:1M x 16 HIGH-SPEED LOW POWER ASYNCHRONOUS CMOS STATIC RAM |
| IS62WV102416ALL-35MLI | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 35ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
| IS62WV102416ALL-35MLI-TR | 功能描述:靜態(tài)隨機(jī)存取存儲(chǔ)器 16M (1Mx16) 35ns Async 靜態(tài)隨機(jī)存取存儲(chǔ)器 RoHS:否 制造商:Cypress Semiconductor 存儲(chǔ)容量:16 Mbit 組織:1 M x 16 訪問(wèn)時(shí)間:55 ns 電源電壓-最大:3.6 V 電源電壓-最小:2.2 V 最大工作電流:22 uA 最大工作溫度:+ 85 C 最小工作溫度:- 40 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:TSOP-48 封裝:Tray |
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