參數(shù)資料
型號: IS62VV25616LL-85T
英文描述: x16 SRAM
中文描述: x16的SRAM
文件頁數(shù): 3/10頁
文件大?。?/td> 88K
代理商: IS62VV25616LL-85T
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. A
11/01/01
3
IS62VV25616LL
ISSI
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
I
OH
= -0.1 mA
1.4
V
V
OL
Output LOW Voltage
I
OL
= 0.1 mA
0.2
V
V
IH
V
IL(1)
Input HIGH Voltage
1.4
V
CC
+ 0.2
V
Input LOW Voltage
0.3
0.4
V
I
LI
Input Leakage
GND
V
IN
V
CC
GND
V
OUT
V
CC
, Outputs Disabled
1
1
μA
I
LO
Output Leakage
1
1
μA
Notes:
1. V
IL
(min.) =
1.0V for pulse width less than 10 ns.
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
V
CC
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
Vcc Related to GND
Storage Temperature
Power Dissipation
Value
Unit
V
°
C
V
°
C
W
0.2 to Vcc+0.3
40 to +85
0.2 to +2.3
65 to +150
1.0
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device.
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated
in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
OPERATING RANGE
Range
Commercial
Industrial
Ambient Temperature
0
°
C to +70
°
C
40
°
C to +85
°
C
V
CC
1.7V - 1.95V
1.7V - 1.95V
CAPACITANCE
(1)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
8
pF
C
OUT
Input/Output Capacitance
V
OUT
= 0V
10
pF
Note:
1. Tested initially and after any design or process changes that may affect these parameters.
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