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參數(shù)資料
| 型號(hào)： | IS61LV256 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 32K x 8 Low Voltage High-Speed CMOS Static RAM(32K x 8低壓高速CMOS靜態(tài)RAM) |
| 中文描述： | 32K的× 8低壓高速CMOS靜態(tài)RAM（32K的× 8低壓高速的CMOS靜態(tài)RAM）的 |
| 文件頁(yè)數(shù)： | 6/8頁(yè) |
| 文件大?。?/td> | 50K |
| 代理商： | IS61LV256 |
IS61LV256
ISSI
6
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. I
11/09/99
AC WAVEFORMS
WRITE CYCLE NO. 1
(
CE
Controlled,
OE
is HIGH or LOW)
(1 )
DATA UNDEFINED
t
WC
VALID ADDRESS
t
SCE
t
PWE1
t
PWE2
t
AW
t
HA
HIGH-Z
t
HD
t
SA
t
HZWE
ADDRESS
CE
WE
D
OUT
D
IN
DATA
IN
VALID
t
LZWE
t
SD
CE_WR1.eps
WRITE CYCLE SWITCHING CHARACTERISTICS
(1,2)
(Over Operating Range)
-8 ns
(3)
Min. Max.
-10 ns
(3)
Min. Max.
-12 ns
Min. Max.
-15 ns
Min. Max.
-20 ns
Min. Max.
Symbol
t
WC
t
SCE
t
AW
Parameter
Unit
Write Cycle Time
8
—
10
—
12
—
15
—
20
—
ns
CE
to Write End
6.5
—
8
—
8
—
10
—
12
—
ns
Address Setup Time
to Write End
6.5
—
8
—
8
—
10
—
12
—
ns
t
HA
Address Hold
from Write End
0
—
0
—
0
—
0
—
0
—
ns
t
SA
t
PWE
1
t
PWE
2
t
SD
t
HD
t
HZWE
(4)
t
LZWE
(4)
Address Setup Time
0
—
0
—
0
—
0
—
0
—
ns
WE
Pulse Width (
OE
HIGH)
6.5
—
7
—
8
—
10
—
12
—
ns
WE
Pulse Width (
OE
LOW)
8
—
10
—
12
—
15
—
20
—
ns
Data Setup to Write End
5
—
5
—
6
—
7
—
10
—
ns
Data Hold from Write End
0
—
0
—
0
—
0
—
0
—
ns
WE
LOW to High-Z Output
—
3.5
—
4
—
6
—
7
—
7
ns
WE
HIGH to Low-Z Output
0
—
0
—
0
—
0
—
0
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.5V, input pulse
levels of 0 to 3.0V and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of
CE
LOW and
WE
LOW. All signals must be in valid states
to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing
are referenced to the rising or falling edge of the signal that terminates the Write.
3. Shaded area =
PREPRODUCTION AVAILABILITY.
4. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100%
tested.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| IS61LV256-10J | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-10JI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-10T | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV256-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:32K X 8 LOW VOLTAGE CMOS STATIC RAM |
| IS61LV25612J | 制造商:Integrated Silicon Solution Inc 功能描述: |
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