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參數(shù)資料
| 型號： | IS61LV256 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 32K x 8 Low Voltage High-Speed CMOS Static RAM(32K x 8低壓高速CMOS靜態(tài)RAM) |
| 中文描述： | 32K的× 8低壓高速CMOS靜態(tài)RAM（32K的× 8低壓高速的CMOS靜態(tài)RAM）的 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 50K |
| 代理商： | IS61LV256 |
IS61LV256
ISSI
Integrated Silicon Solution, Inc.
—
1-800-379-4774
Rev. I
11/09/99
3
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
Parameter
Test Conditions
Min.
Max.
Unit
V
OH
Output HIGH Voltage
V
CC
= Min., I
OH
=
–
2.0 mA
2.4
—
V
V
OL
Output LOW Voltage
V
CC
= Min., I
OL
= 4.0 mA
—
0.4
V
V
IH
Input HIGH Voltage
2.2
V
CC
+ 0.3
V
V
IL
Input LOW Voltage
(1)
–
0.3
0.8
V
I
LI
Input Leakage
GND
≤
V
IN
≤
V
CC
Com.
Ind.
–
1
–
5
1
5
μA
I
LO
Output Leakage
GND
≤
V
OUT
≤
V
CC
, Outputs Disabled
Com.
Ind.
–
1
–
5
1
5
μA
Notes:
1. V
IL
(min.) =
–
0.3V (DC); V
IL
(min.) =
–
2.0V (pulse width
≤
2.0 ns).
V
IH
(max.) = V
CC
+ 0.5V (DC); V
IH
(max.) = Vcc + 2.0V (pulse width
≤
2.0 ns).
2. Not more than one output should be shorted at one time. Duration of the short circuit should not exceed 30 seconds.
CAPACITANCE
(1,2)
Symbol
Parameter
Conditions
Max.
Unit
C
IN
Input Capacitance
V
IN
= 0V
6
pF
C
OUT
Output Capacitance
V
OUT
= 0V
5
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters.
2. Test conditions: T
A
= 25
°
C, f = 1 MHz, Vcc = 3.3V.
OPERATING RANGE
Range
Commercial
Ambient Temperature
0
°
C to +70
°
C
Speed
8, 10, 12
15, 20
All
V
CC
3.3V, +10%,
–
5%
3.3V ± 10%
3.3V + 10%,
–
5%
Industrial
–
40
°
C to +85
°
C
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
-8 ns
(2)
Min.Max.
-10 ns
(2)
Min.Max.
-12 ns
Min.Max.
-15 ns
Min.Max.
-20 ns
Min.Max.
Sym.
Parameter
Test Conditions
Unit
I
CC
Vcc Dynamic Operating
Supply Current
V
CC
= Max.,
CE
= V
IL
I
OUT
= 0 mA, f = f
MAX
Com.
Ind.
—
120
—
—
110
—
120
—
100
—
110
—
—
100
90
—
—
80
90
mA
—
I
SB
1
TTL Standby Current
(TTL Inputs)
V
CC
= Max.,
V
IN
= V
IH
or V
IL
CE
≥
V
IH
, f = 0
Com.
Ind.
—
—
15
—
—
—
10
20
—
—
10
20
—
—
10
20
—
—
10
20
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
V
CC
= Max.,
CE
≤
V
CC
–
0.2V,
V
IN
> V
CC
–
0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
—
—
2
—
—
—
2
5
—
—
2
5
—
—
2
5
—
—
2
5
mA
Notes:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
2. Shaded area =
PREPRODUCTION AVAILABILITY.
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