參數(shù)資料
型號(hào): IS61LV256
廠商: Integrated Silicon Solution, Inc.
英文描述: 32K x 8 Low Voltage High-Speed CMOS Static RAM(32K x 8低壓高速CMOS靜態(tài)RAM)
中文描述: 32K的× 8低壓高速CMOS靜態(tài)RAM(32K的× 8低壓高速的CMOS靜態(tài)RAM)的
文件頁(yè)數(shù): 2/8頁(yè)
文件大?。?/td> 50K
代理商: IS61LV256
IS61LV256
ISSI
2
Integrated Silicon Solution, Inc.
1-800-379-4774
Rev. I
11/09/99
PIN CONFIGURATION
28-Pin SOJ
22
23
24
25
26
27
28
1
2
3
4
5
6
7
21
20
19
18
17
16
15
14
13
12
11
10
9
8
OE
A11
A9
A8
A13
WE
VCC
A14
A12
A7
A6
A5
A4
A3
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
GND
I/O2
I/O1
I/O0
A0
A1
A2
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
GND
VCC
WE
A13
A8
A9
A11
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
PIN CONFIGURATION
28-Pin TSOP (Type I)
PIN DESCRIPTIONS
A0-A14
Address Inputs
CE
Chip Enable Input
OE
Output Enable Input
WE
Write Enable Input
I/O0-I/O7
Input/Output
Vcc
Power
GND
Ground
TRUTH TABLE
Mode
WE
CE
OE
I/O Operation
Vcc Current
Not Selected
(Power-down)
Output Disabled
Read
Write
X
H
X
High-Z
I
SB
1
, I
SB
2
H
H
L
L
L
L
H
L
X
High-Z
D
OUT
D
IN
I
CC
I
CC
I
CC
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
CC
V
TERM
T
BIAS
Parameter
Power Supply Voltage Relative to GND
Terminal Voltage with Respect to GND
Temperature Under Bias
Value
0.5 to +4.6
0.5 to +4.6
10 to +85
45 to +90
65 to +150
1
±20
Unit
V
V
°
C
Com.
Ind.
T
STG
P
D
I
OUT
Storage Temperature
Power Dissipation
DC Output Current
°
C
W
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent
damage to the device. This is a stress rating only and functional operation of the device at these or any
other conditions above those indicated in the operational sections of this specification is not implied.
Exposure to absolute maximum rating conditions for extended periods may affect reliability.
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