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參數(shù)資料
| 型號： | IS45S32200C1 |
| 廠商： | Integrated Silicon Solution, Inc. |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 為512k位× 32位× 4銀行（64兆位）同步動態(tài)RAM |
| 文件頁數(shù)： | 36/59頁 |
| 文件大小： | 622K |
| 代理商： | IS45S32200C1 |
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IS45S32200C1
ISSI
36
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/18/06
AC ELECTRICAL CHARACTERISTICS
(1,2,3)
-7
Symbol
Parameter
Condition
Min.
Max.
Units
t
DPL3
Input Data To Precharge
Command Delay time
CAS
Latency = 3
2CLK
—
ns
t
DPL2
CAS
Latency = 2
2CLK
—
ns
t
DAL3
Input Data To Active / Refresh
Command Delay time (During Auto-Precharge)
CAS
Latency = 3
2CLK+t
RP
—
ns
t
DAL2
CAS
Latency = 2
2CLK+t
RP
—
ns
t
T
Transition Time
(2)
0.3
1.2
ns
t
WR
Write Recovery Time
1CLK+7ns
—
t
CK
t
XSR
Exit Self Refresh and Active Command
(6)
70
—
ns
t
RFC
Auto Refresh Period
70
—
ns
t
REF
Notes:
1. An initial pause of 100us is required after power up, followed by two AUTO REFRESH commands, before proper device
operation is ensured. (V
DD
and V
DDQ
must be powered up simultaneously. GND and GNDQ must be at same potential.) The
two AUTO REFRESH command wake-ups should be repeated anytime the t
REF
refresh requirement is exceeded.
2. Measured with t
T
= 0.5 ns.
3. The reference level is 1.5V when measuring input signal timing. Rise/fall times are measured between V
IH
(min.) and V
IL
(max.).
4. Access time is measured at 1.5V with the load shown in the figure below.
5. The time t
HZ
(max.) is defined as the time required for the output voltage to transition by ± 200 mV from V
OH
(min.) or V
OL
(max.)
when the output is in the high impedance state.
6. CLK must be toggled a minimum of two times during this period.
Refresh Cycle Time (4096)
—
64
ms
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS45S32200C1-7BLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TLA | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200C1-7TLA1 | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS45S32200E | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
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