參數(shù)資料
型號(hào)： IS45S32200C1
廠商： Integrated Silicon Solution, Inc.
英文描述： 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
中文描述： 為512k位× 32位× 4銀行（64兆位）同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 34/59頁(yè)
文件大?。?/td> 622K
代理商： IS45S32200C1
IS45S32200C1
ISSI
34
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. B
05/18/06
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
0V
≤
V
IN
≤
V
DD
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
DD
I
OUT
= –2 mA
I
OUT
= +2 mA
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
—
–5
5
μA
I
OL
Output Leakage Current
—
–5
5
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
—
—
2.4
—
—
0.4
V
V
I
CC1
Operating Current
(1,2)
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
CAS
latency = 3
-7
—
130
mA
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
—
—
—
—
—
—
—
—
—
—
—
—
-7
—
—
—
—
—
—
—
—
—
—
—
—
—
2
2
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
CKE
≥
V
IH
(
MIN
)
45
30
35
7
8
6
7
70
60
65
180
A:
A1:
I
CC3P
Active Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
) A:
A1:
A:
A1:
I
CC3PS
(In Power-Down Mode)
t
CK
=
∞
I
CC3N
I
CC3NS
Active Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
A:
A1:
I
CC4
Operating Current
(In Burst Mode)
(1)
Auto-Refresh Current
Self-Refresh Current
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
t
RC
= t
RC
(
MIN
)
CKE
≤
0.2V
CAS
latency = 3
I
CC5
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vdd and GND for each memory
chip to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
CAS
latency = 3
-7
—
—
—
160
1.5
mA
mA
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IS45S32200C1-7BLA1 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32200C1-7TA1 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32200C1-7TLA 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32200C1-7TLA1 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
IS45S32200E 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM
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