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參數(shù)資料
| 型號： | IS42S81600A-10T |
| 英文描述： | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| 中文描述： | 16Meg × 8，8Meg x16 |
| 文件頁數(shù)： | 7/65頁 |
| 文件大?。?/td> | 556K |
| 代理商： | IS42S81600A-10T |
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Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
15
ADVANCEDINFORMATION
Rev. 00A
06/01/02
ISSI
IS42S81600A, IS42S16800A, IS42S32400A
IS42LS81600A, IS42LS16800A, IS42LS32400A
CS
RAS
RAS CAS
CAS
WE
Address
Command
Action
Write Recovering
H
×
DESL
Nop Enter row active after tDPL
L
H
×
NOP
Nop Enter row active after tDPL
L
H
L
×
BST
Nop Enter row active after tDPL
L
H
L
H
BA, CA, A10
READ/READA
Begin read (6)
L
H
L
BA, CA, A10
WRIT/ WRITA
Begin new write
L
H
BA, RA
ACT
ILLEGAL (2)
L
H
L
BA, A10
PRE/PALL
ILLEGAL (2)
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Write Recovering
H
×
DESL
Nop Enter precharge after tDPL
with Auto
L
H
×
NOP
Nop Enter precharge after tDPL
Precharge
L
H
L
×
BST
Nop Enter row active after tDPL
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL (2, 6)
L
H
BA, RA
ACT
ILLEGAL (2)
L
H
L
BA, A10
PRE/PALL
ILLEGAL (2)
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Refresh
H
×
DESL
Enter idle after tRC1
L
H
×
NOP
Nop Enter idle after tRC1
L
H
L
×
BST
Nop Enter idle after tRC1
L
H
L
H
BA, CA, A10
EAD/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
Mode Register
H
×
DESL
Nop Enter idle after tRSC
Accessing
L
H
×
NOP
Nop Enter idle after tRSC
L
H
L
×
BST
Nop Enter idle after tRSC
L
H
L
H
BA, CA, A10
READ/READA
ILLEGAL
L
H
L
BA, CA, A10
WRIT/WRITA
ILLEGAL
L
H
BA, RA
ACT
ILLEGAL
L
H
L
BA, A10
PRE/PALL
ILLEGAL
L
H
×
REF
ILLEGAL
L
OC, BA
MRS/EMRS
ILLEGAL
FUNCTIONAL TRUTH TABLE Continued:
Note: H=VIH, L=VIL x= VIH or VIL, V = Valid Data, BA= Bank Address, CA+Column Address, RA=Row Address, OC= Op-Code
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S81600A-10TI | 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IC42S81600L-7T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-7TI(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-8T(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IC42S81600L-8TI(G) | 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S81600A-10TI | 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-10TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-6T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-6TL | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S81600A-7T | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
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