參數(shù)資料
型號: IS42S81600A-10T
英文描述: 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
中文描述: 16Meg × 8,8Meg x16
文件頁數(shù): 58/65頁
文件大小: 556K
代理商: IS42S81600A-10T
62
XMEGA C3 [DATASHEET]
8361D–AVR–07/2013
Notes:
1.
Cycle times for data memory accesses assume internal memory accesses, and are not valid for accesses via the external RAM interface.
2.
One extra cycle must be added when accessing internal SRAM.
SEV
Set Two’s Complement Overflow
V
1
V
1
CLV
Clear Two’s Complement Overflow
V
0
V
1
SET
Set T in SREG
T
1
T
1
CLT
Clear T in SREG
T
0
T
1
SEH
Set Half Carry Flag in SREG
H
1
H
1
CLH
Clear Half Carry Flag in SREG
H
0
H
1
MCU control instructions
BREAK
Break
(See specific descr. for BREAK)
None
1
NOP
No Operation
None
1
SLEEP
Sleep
(see specific descr. for Sleep)
None
1
WDR
Watchdog Reset
(see specific descr. for WDR)
None
1
Mnemonics
Operands
Description
Operation
Flags
#Clocks
相關(guān)PDF資料
PDF描述
IS42S81600A-10TI 16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IC42S81600L-7T(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
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IC42S81600L-8T(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
IC42S81600L-8TI(G) 4(2)M x 8(16) Bits x 4 Banks (128-MBIT) SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S81600A-10TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-10TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-6T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-6TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S81600A-7T 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM