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| 型號： | IS42S32200-7TI |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 |
| 封裝： | 0.400 INCH, TSOP2-86 |
| 文件頁數(shù)： | 1/55頁 |
| 文件大?。?/td> | 982K |
| 代理商： | IS42S32200-7TI |
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Integrated Silicon Solution, Inc. — 1-800-379-4774
PRELIMINARY INFORMATION
08/14/03
1
Rev. 00B
IS42S32200
512K Bits x 32 Bits x 4 Banks (64-MBIT)
SYNCHRONOUS DYNAMIC RAM
ISSI
Copyright 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
FEATURES
Clock frequency: 166, 143 MHz
Fully synchronous; all signals referenced to a
positive clock edge
Internal bank for hiding row access/precharge
Single 3.3V power supply
LVTTL interface
Programmable burst length
– (1, 2, 4, 8, full page)
Programmable burst sequence:
Sequential/Interleave
Self refresh modes
4096 refresh cycles every 64 ms
Random column address every clock cycle
Programmable
CAS
latency (2, 3 clocks)
Burst read/write and burst read/single write
operations capability
Burst termination by burst stop and precharge
command
Industrial temperature availability
Package 400-mil 86-pin TSOP II
OVERVIEW
ISSI
's 64Mb Synchronous DRAM IS42S32200 is organized
as 524,288 bits x 32-bit x 4-bank for improved performance.
The synchronous DRAMs achieve high-speed data transfer
using pipeline architecture. All inputs and outputs signals
refer to the rising edge of the clock input.
PRELIMINARY INFORMATION
August 2003
PIN CONFIGURATION
(86-Pin TSOP (Type II)
VCC
I/O0
VCCQ
I/O1
I/O2
GNDQ
I/O3
I/O4
VCCQ
I/O5
I/O6
GNDQ
I/O7
NC
VCC
DQM0
WE
CAS
RAS
CS
NC
BA0
BA1
A10/AP
A0
A1
A2
DQM2
VCC
NC
I/O16
GNDQ
I/O17
I/O18
VCCQ
I/O19
I/O20
GNDQ
I/O21
I/O22
VCCQ
I/O23
VCC
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
86
85
84
83
82
81
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
50
49
48
47
46
45
44
GND
I/O15
GNDQ
I/O14
I/O13
VCCQ
I/O12
I/O11
GNDQ
I/O10
I/O9
VCCQ
I/O8
NC
GND
DQM1
NC
NC
CLK
CKE
A9
A8
A7
A6
A5
A4
A3
DQM3
GND
NC
I/O31
VCCQ
I/O30
I/O29
GNDQ
I/O28
I/O27
VCCQ
I/O26
I/O25
GNDQ
I/O24
GND
PIN DESCRIPTIONS
A0-A10
Address Input
BA0, BA1
Bank Select Address
I/O0 to I/O31
Data I/O
CLK
System Clock Input
CKE
Clock Enable
CS
Chip Select
RAS
Row Address Strobe Command
CAS
Column Address Strobe Command
WE
Write Enable
DQM0 to DQM3 Input/Output Mask
Vcc
Power
GND
Ground
Vcc
Q
Power Supply for I/O Pin
GND
Q
Ground for I/O Pin
NC
No Connection
相關PDF資料 |
PDF描述 |
|---|---|
| IS42S32400B-7TLI | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6B | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6BL | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
| IS42S32400B-6T | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32200B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
| IS42S32200B-6TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6TL | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
| IS42S32200B-6TLI | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
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