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| 型號： | IS42S32200-7T |
| 廠商： | INTEGRATED SILICON SOLUTION INC |
| 元件分類： | DRAM |
| 英文描述： | 512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| 中文描述： | 2M X 32 SYNCHRONOUS DRAM, 6 ns, PDSO86 |
| 封裝： | 0.400 INCH, TSOP2-86 |
| 文件頁數(shù)： | 32/55頁 |
| 文件大?。?/td> | 982K |
| 代理商： | IS42S32200-7T |
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IS42S32200
ISSI
32
Integrated Silicon Solution, Inc. — 1-800-379-4774
ADVANCE INFORMATION
Rev. 00B
08/14/03
DC ELECTRICAL CHARACTERISTICS
(Recommended Operation Conditions unless otherwise noted.)
Symbol
Parameter
Test Condition
0V
≤
V
IN
≤
V
CC
, with pins other than
the tested pin at 0V
Output is disabled
0V
≤
V
OUT
≤
V
CC
I
OUT
= –2 mA
I
OUT
= +2 mA
Speed
Min.
Max.
Unit
I
IL
Input Leakage Current
–5
5
μA
I
OL
Output Leakage Current
–5
5
μA
V
OH
V
OL
Output High Voltage Level
Output Low Voltage Level
2.4
—
—
0.4
V
V
I
CC1
Operating Current
(1,2)
One Bank Operation,
Burst Length=1
t
RC
≥
t
RC
(min.)
I
OUT
= 0mA
CKE
≤
V
IL
(
MAX
)
CAS
latency = 3
-6
-7
—
—
150
130
mA
mA
I
CC2P
I
CC2PS
I
CC2N
I
CC2NS
Precharge Standby Current
(In Power-Down Mode)
Precharge Standby Current
(In Non Power-Down Mode)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
—
—
3
mA
CKE
≥
V
IH
(
MIN
)
Com.
Ind.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
25
25
25
25
25
25
55
60
60
mA
mA
mA
mA
mA
mA
mA
mA
mA
I
CC3P
Active Standby Current
CKE
≤
V
IL
(
MAX
)
t
CK
= t
CK
(
MIN
) Com.
Ind.
Com.
Ind.
I
CC3PS
(In Power-Down Mode)
t
CK
=
∞
I
CC3N
I
CC3NS
Active Standby Current
(In Non Power-Down Mode)
CKE
≥
V
IH
(
MIN
)
t
CK
= t
CK
(
MIN
)
t
CK
=
∞
Com.
Ind.
I
CC4
Operating Current
(In Burst Mode)
(1)
t
CK
= t
CK
(
MIN
)
I
OUT
= 0mA
CAS
latency = 3
-6
-7
—
—
180
160
mA
mA
CAS
latency = 2
-6
-7
—
—
180
180
mA
mA
I
CC5
Auto-Refresh Current
t
RC
= t
RC
(
MIN
)
CAS
latency = 3
-6
-7
—
—
225
225
mA
mA
CAS
latency = 2
-6
-7
—
—
225
225
mA
mA
I
CC6
Notes:
1. These are the values at the minimum cycle time. Since the currents are transient, these values decrease as the cycle time
increases. Also note that a bypass capacitor of at least 0.01 μF should be inserted between Vcc and GND for each memory chip
to suppress power supply voltage noise (voltage drops) due to these transient currents.
2. Icc
1
and Icc
4
depend on the output load. The maximum values for Icc
1
and Icc
4
are obtained with the output open state.
Self-Refresh Current
CKE
≤
0.2V
—
—
2
mA
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| IS42S32400B-7TLI | 4Meg x 32 128-MBIT SYNCHRONOUS DRAM |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| IS42S32200-7TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6T | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
| IS42S32200B-6TI | 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:512K Bits x 32 Bits x 4 Banks (64-MBIT) SYNCHRONOUS DYNAMIC RAM |
| IS42S32200B-6TL | 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 64M-Bit 2Mx32 3.3V 86-Pin TSOP-II |
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