參數(shù)資料
型號: IS42S16800A1
廠商: Integrated Silicon Solution, Inc.
英文描述: 8Meg x16 128-MBIT SYNCHRONOUS DRAM
中文描述: 8Meg x16 128兆位同步DRAM
文件頁數(shù): 22/63頁
文件大?。?/td> 827K
代理商: IS42S16800A1
ISSI
22
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.
00
B
0
5/01
/06
IS42S16800A1
Precharge Termination
The Precharge Command may be used to terminate either a burst read or burst write operation. When the Precharge command
is issued, the burst operation is terminated and bank precharge begins. For burst read operations, valid data will continue to
appear on the data bus as a function of CAS Latency.
Burst Read Interrupted by Precharge
COMMAND
READ Ax
0
NOP
NOP
NOP
NOP
NOP
*
NOP
NOP
t
CK2
,
DQs
CAS latency = 2
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT Ax
0
DOUT Ax
1
DOUT Ax
2
DOUT Ax
3
Precharge A
t
CK3
,
DQs
CAS latency = 3
DOUT Ax
0
DOUT Ax
1
DOUT Ax
2
DOUT Ax
3
t
RP
t
RP
*
Bank A can be reactivated at completion of t
.
t
RP
is a function of clock cycle time and speed sort.
*
See the Clock Frequency and Latency table.
(Burst Length = 8, CAS Latency = 2, 3)
相關(guān)PDF資料
PDF描述
IS42S16800A1-7TL 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-7TL 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-6T 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-6TL 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16800A-10B 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10BI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10T 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II
IS42S16800A-10TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM