參數(shù)資料
型號(hào): IS42S16800A1
廠商: Integrated Silicon Solution, Inc.
英文描述: 8Meg x16 128-MBIT SYNCHRONOUS DRAM
中文描述: 8Meg x16 128兆位同步DRAM
文件頁(yè)數(shù): 21/63頁(yè)
文件大?。?/td> 827K
代理商: IS42S16800A1
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.
00
B
0
5/01
/06
21
ISSI
IS42S16800A1
Burst Read Followed by the Precharge Command
Burst Write Followed by the Precharge Command
COMMAND
READ Ax
0
NOP
NOP
NOP
NOP
NOP
NOP
*
NOP
t
CK2
,
DQs
CAS latency = 3
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
DOUT Ax
0
DOUT Ax
1
DOUT Ax
2
DOUT Ax
3
Precharge A
t
RP
Bank A can be reactivated at completion of t
RP
.
t
RP
is a function of clock cycle and speed sort.
*
(Burst Length = 4, CAS Latency = 3)
COMMAND
NOP
NOP
NOP
*
WRITE Ax
0
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
NOP
NOP
DIN Ax
0
DIN Ax
1
Bank can be reactivated at completion of t
.
t
DPL
and t
RP
are functions of clock cycle and speed sort.
See the Clock Frequency and Latency table.
*
Activate
Bank Ax
t
CK2,
DQs
CAS latency = 2
t
DPL
t
RP
Precharge A
(Burst Length = 2, CAS Latency = 2)
相關(guān)PDF資料
PDF描述
IS42S16800A1-7TL 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-7TL 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-6T 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-6TL 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16800A-10B 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10BI 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10T 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II
IS42S16800A-10TI 制造商:ICSI 制造商全稱(chēng):Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10TL 制造商:ISSI 制造商全稱(chēng):Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM