參數(shù)資料
型號(hào)： IS42S16800A1
廠商： Integrated Silicon Solution, Inc.
英文描述： 8Meg x16 128-MBIT SYNCHRONOUS DRAM
中文描述： 8Meg x16 128兆位同步DRAM
文件頁數(shù)： 18/63頁
文件大?。?/td> 827K
代理商： IS42S16800A1
ISSI
18
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev.
00
B
0
5/01
/06
IS42S16800A1
Although a Read Command with auto-precharge can not be interrupted by a command to the same bank, it can be interrupted
by a Read or Write Command to a different bank. If the command is issued before auto-precharge begins then the precharge
function will begin with the new command. The bank being auto-precharged may be reactivated after the delay t
RP
.
If interrupting a Read Command with auto-precharge with a Write Command, DQM must be used to avoid DQ contention.
Burst Read with Auto-Precharge Interrupted by Read
Burst Read with Auto-Precharge Interrupted by Write
t
RP
COMMAND
NOP
*
NOP
NOP
NOP
Auto-Precharge
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
NOP
t
RP
t
CK2
,
DQs
CAS latency = 2
t
CK3
,
DQs
CAS latency = 3
*
Bank can be reactivated at completion of t
RP
.
t
RP
is a function of clock cycle time and speed sort.
See the Clock Frequency and Latency table.
DOUT A
0
DOUT A
1
NOP
DOUT A
0
DOUT A
1
DOUT B
0
DOUT B
1
*
READ B
DOUT B
2
DOUT B
3
DOUT B
0
DOUT B
1
DOUT B
2
DOUT B
3
(Burst Length = 4, CAS Latency = 2, 3)
COMMAND
NOP
NOP
*
NOP
Auto-Precharge
t
RP
CK
T0
T2
T1
T3
T4
T5
T6
T7
T8
NOP
NOP
t
CK2,
DQs
CAS latency = 2
DQM
NOP
DOUT A
0
DIN B
0
DIN B
1
WRITE B
DIN B
2
DIN B
3
NOP
DIN B
4
*
Bank can be reactivated at completion of t
RP
.
t
RP
is a function of clock cycle time and speed sort.
.
See the Clock Frequency and Latency table
.
(Burst Length = 8, CAS Latency = 2)
相關(guān)PDF資料
PDF描述
IS42S16800A1-7TL 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-7TL 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-6T 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
IS42S16800B-6TL 16Meg x 8, 8Meg x16 128-MBIT SYNCHRONOUS DRAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
IS42S16800A-10B 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10BI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10T 制造商:Integrated Silicon Solution Inc 功能描述:DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II
IS42S16800A-10TI 制造商:ICSI 制造商全稱:Integrated Circuit Solution Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
IS42S16800A-10TL 制造商:ISSI 制造商全稱:Integrated Silicon Solution, Inc 功能描述:16Meg x 8, 8Meg x16 & 4Meg x 32 128-MBIT SYNCHRONOUS DRAM
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